PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED123UL
4/2/04
Page 1 of 4
2004 Fairchild Semiconductor Corporation
FEATURES
UL217 Approved
= 880 nm
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched Photosensor: QSB34
Narrow Emission Angle, 18
High Output Power
Package material and color: Clear, peach
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
ANODE
CATHODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
4/2/04
Page 2 of 4
2004 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED123UL
NOTES:
1. Derate power dissipation linearly 2.67 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing
.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to + 100
C
Storage Temperature
T
STG
-40 to + 100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
100
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
200
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Emission Wavelength
I
F
= 20 mA
PE
--
880
--
nm
Emission Angle
I
F
= 100 mA
2
1
/
2
--
18
--
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
--
--
1.7
V
Reverse Current
V
R
= 5 V
I
R
--
--
10
A
Radiant Intensity QED121
I
F
= 100 mA, tp = 20 ms
I
E
16
--
40
mW/sr
Rise Time
I
F
= 100 mA
t
r
--
800
--
ns
Fall Time
t
f
--
800
--
ns
4/2/04
Page 3 of 4
2004 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED123UL
Typical Performance Characteristics
Normalized to:
I
F
= 100 mA, T
A
= 25C
Pulse Width = 100
s
10
1
1
10
NORMALIZED RADIANT INTENSITY
I
F
- INPUT CURRENT (mA)
Fig. 1 Normalized Radiant Intensity vs. Input Current
100
1000
0.1
0.01
0.001
NORMALIZED COLLECT
OR CURRENT
LENS TIP SEPERATION (INCHES)
Fig. 2 Coupling Characteristics of QED12X and QSD12X
0
1
1
0.8
0.6
0.4
0.2
0
2
3
4
5
6
Normalized to:
Pulse Width = 100
s
Duty Cycle = 0.1%
V
CC
= 5 V
R
L
= 100
T
A
= 25C
I
F
= 100 mA
I
F
= 20 mA
2.5
2
1.5
1
0.5
-30
-40
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
T
A
- TEMPERATURE (C)
Fig. 3 Forward Voltage vs. Temperature
I
F
= 10 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 50 mA
Pulse Width = 100
s
Duty Cycle = 0.1%
Fig. 5 Radiation Pattern
Fig. 4 Normalized Radiant Intensity vs. Wavelength
(nm)
775
800
825
850
875
900
925
950
NORMALIZED RADIANT INTENSITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
20
40
60
80
100
0
20
40
60
80
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
4/2/04
Page 4 of 4
2004 Fairchild Semiconductor Corporation
PLASTIC INFRARED
LIGHT EMITTING DIODE
QED123UL
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