EMITTER
0.174 (4.44)
0.060 (1.50)
0.030 (0.76)
0.047 (1.20)
0.177 (4.51)
0.224 (5.71)
0.5 (12.7)
MIN
0.020 (0.51)
SQ. (2X)
0.060 (1.52)
0.100 (2.54)
R 0.030 (0.76)
PACKAGE DIMENSIONS
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Wavelength = 940 nm, GaAs
Package Type: Sidelooker
Medium Beam Angle, 50
Clear Plastic Package
Matched Photosensors: QSE213 and QSE243
ANODE
CATHODE
SCHEMATIC
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PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
DESCRIPTION
The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package.
2001 Fairchild Semiconductor Corporation
DS300239
9/18/01
1 OF 4
www.fairchildsemi.com
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to + 100
C
Storage Temperature
T
STG
-40 to + 100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
100
mA
Reverse Voltage
V
R
5
V
Peak Forward Current
(5)
I
FP
1
A
Power Dissipation
(1)
P
D
100
mW
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Emission Wavelength
I
F
= 100 mA
l
P
--
940
--
nm
Emission Angle
I
F
= 100 mA
U
--
25
--
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
--
--
1.5
V
Reverse Current
V
R
= 5 V
I
R
--
--
10
A
Radiant Intensity
I
F
= 100 mA, tp = 20 ms
I
e
2
--
--
mW/sr
Rise Time
I
F
= 100 mA
t
r
--
1
--
s
Fall Time
tp = 100 s, T = 10 mS
t
f
--
1
--
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 2.67 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16"
(1.6 mm) minimum from housing.
5. Pulse conditions: tp = 100 s, T
= 10 ms.
www.fairchildsemi.com
2 OF 4
9/18/01
DS300239
0
10
3
10
2
10
1
10
0
1
2
3
4
5
6
I
F
Pulsed
t
pw
= 100 s
T
A
= 25C
V
F
- FORWARD VOLTAGE (V)
I
F
- FOR
W
ARD CURRENT (mA)
Fig. 1 Forward Current vs. Forward Voltage
0
10
100
1000
10
1
0.1
0.01
0.001
I
E
- NORMALIZED RADIANT INTENSITY
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized Radiant Intensity
vs. Forward Current
Fig. 4 Radiation Diagram
Normalized to:
I
F
= 100 mA Pulsed
t
pw
= 100 s
Duty Cycle = 0.1%
T
A
= 25C
90
0
10
20
30
40
50
60
70
80
100
110
120
130
140
150
160
180
170
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
0
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
T
A
- AMBIENT TEMPERATURE (C)
Fig. 2 Forward Voltage vs. Ambient Temperature
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
1.5
2.0
I
F
Pulsed
t
pw
= 100 s
Duty Cycle = 0.1%
I
F = 100 mA
I
F = 20 mA
I
F = 50 mA
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
DS300239
9/18/01
3 OF 4
www.fairchildsemi.com
TYPICAL PERFORMANCE CURVES
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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4 OF 4
9/18/01
DS300239
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