PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
PS
--
880
--
nm
Wavelength Sensitivity Range
SR
700
--
1000
nm
Reception Angle
--
120
--
Deg.
Collector Emitter Dark Current
V
CE
= 25 V, E
e
= 0
I
D
--
--
200
nA
Collector Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter Collector Breakdown
I
E
= 100 A
BV
ECO
5
--
--
V
On-State Collector Current
E
e
= 0.1 mW/cm
2(4)
, V
CE
= 5 V
I
C (ON)
16
--
--
A
Saturation Voltage
E
e
= 0.5 mW/cm
2(4)
, I
C
= 0.05 mA
V
CE (SAT)
--
--
0.3
V
Rise Time
V
CC
= 5 V, R
L
= 100
t
r
--
8
--
s
Fall Time
I
C
= 1 mA
t
f
--
8
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
NOTES
1. Derate power dissipation linearly
2.2 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4.
= 940 nm.
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-55 to +100
C
Storage Temperature
T
STG
-55 to +100
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Collector Emitter Voltage
V
CE
35
V
Emitter Collector Voltage
V
EC
5
V
Collector Current
I
C
15
mA
Power Dissipation
(1)
P
D
165
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.134 (3.4)
0.118 (3.0)
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
0.041 (0.1)
0.094 (2.4)
COLLECTOR
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Surface Mount PLCC-2 Package
Wide Reception Angle, 120
High Sensitivity
Phototransistor Output
Matched Emitter: QEB421
Daylight Filter
SCHEMATIC
EMITTER
COLLECTOR
QSB320F
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
2001 Fairchild Semiconductor Corporation
DS300387
2/26/01
1 OF 3
www.fairchildsemi.com
QSB320F
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
Fig.1 Dark Current Vs. Ambient Temperature
TA-Ambient Temperature (
o
C)
40
60
80
100
I D
-Nor
maliz
ed Dar
k Current
10
-1
10
0
10
1
10
2
10
3
VCE=10V
VCE=25V
Normalized to:
VCE=25V
TA=25oC
Fig.2 Dark Current Vs. Collector Emitter Voltage
V
CE
-Collector Emitter Voltage (V)
0
10
20
30
40
50
60
I
D
-Dar
k Current (nA)
0.1
1
10
Fig4. Light Current Vs. Ambient Temperature
TA-Ambient Temperature (
o
C)
-40
-20
0
20
40
60
80
100
I
L
-Nor
maliz
ed Light Current
0.1
1
10
V
2
T
Normalized to:
CE=5V
Ie=0.5mW/cm
A=25
oC
Fig.3 Light Current Vs. Collector to Emitter Voltage
V
CE
-Collector-emitter Voltage (V)
0.1
1
10
I L
-Nor
maliz
ed Light Current
0.001
0.01
0.1
1
10
Normalized to:
VCE=5V
Ie=0.5mW/cm2
TA=25oC
Ie=1mW/cm2
Ie=0.5mW/cm2
Ie=0.2mW/cm2
Ie=0.1mW/cm2
www.fairchildsemi.com
2 OF 3
2/26/01
DS300387
QSB320F
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300387
2/26/01
3 OF 3
www.fairchildsemi.com
PDF 
ZIP