PACKAGE DIMENSIONS
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
QSB363
2001 Fairchild Semiconductor Corporation
DS300357
8/2/01
1 OF 5
www.fairchildsemi.com
DESCRIPTION
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
FEATURES
NPN Silicon Phototransistor
T-3/4 (2mm) Surface Mount Package
Medium Wide Beam Angle, 24
Black Plastic Package
Matched Emitters: QEB363 or QEB373
Daylight Filter
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Peak Sensitivity Wavelength
PS
--
880
--
nm
Reception Angle
--
12
--
Deg.
Dark Current
V
CE
= 10 V, Ee = 0
I
D
--
--
100
nA
Collector-Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter-Collector Breakdown
I
E
= 100 A
BV
ECO
4
--
--
V
On-State Collector Current
Ee = 0.5 mW/cm2
I
C
(on)
0.7
--
--
mA
V
CE
= 5 V
(5)
Saturation Voltage
Ee = 0.5 mW/cm2
V
CE (SAT)
--
--
0.4
V
I
C
= 0.1 mA
(5)
Rise Time
V
CC
= 5 V, R
L
= 100
t
r
--
5
--
s
Fall Time
I
C
= 0.2 mA
t
f
--
5
--
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
NOTES
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100
s, T = 10 ms.
5. = 940 nm, GaAs.
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +85
C
Storage Temperature
T
STG
-40 to +85
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Collector Emitter Voltage
V
CE
30
V
Emitter Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
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2 OF 5
8/2/01
DS300357
Relativ
e Sensitivity (%)
Wavelength (nm)
0
20
40
60
80
100
400
500
600
700
800
900
1000
1100
Fig. 5 Spectral Sensitivity
100
90
80
70
60
50
40
30
20
10
0
-25
0
25
50
75
85
100
Ambient Temperature T
A
(C)
Ambient Temperature T
A
(C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector P
o
w
e
r
Dissipation (mW)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relativ
e Collector Current (%)
Ambient Temperature T
A
(C)
0
20
40
60
80
100
0
10
20
30
40
50
60
70
120
140
160
V
CE
= 5 V
Ee=1 mW/cm2
7
6
5
4
3
2
1
0
0
1
2
3
4
Collector Current I
C
(mA)
Collector Emitter Voltage VCE (V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
Collector Current I
C
(mA)
Irradiance Ee (mW/cm2)
0.1
0.2
0.5
1
2
5
10
20
20
0.2
2
5
10
1
0.5
0.1
V
CE
= 5 V
T
A
= 25
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10
10
10
6
10
7
10
8
10
9
2
5
2
5
2
5
2
5
Collector Dar
k Current (A)
0
25
50
75
100
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
TYPICAL PERFORMANCE CURVES
DS300357
8/2/01
3 OF 5
www.fairchildsemi.com
NOTES: (Applies to all package drawings)
1. Dimensions are in inches (mm).
2. Tolerance of .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
Three lead forming options: Gull Wing, Yoke and Z-Bend
Compatible with automatic placement equipment
Supplied on tape and reel or in bulk packaging
Compatible with vapor phase reflow solder processes
YOKE LEAD CONFIGURATION
0.074 (1.9)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.118 (3.0)
0.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.043 (1.1)
0.098 (2.5)
0.051 (1.3)
0.141 (3.6)
0.031 (0.8)
ANODE
0.008 (0.2)
0.283 (7.2)
Z-BEND LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.080 (2.0)
0.043 (1.1)
0.236 (6.0)
0.220 (5.6)
0.177 (4.5)
0.161 (4.1)
0.031 (0.8)
ANODE
0.127 (3.25)
0.112 (2.85)
GULL WING LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.166 (4.2)
0.020 (0.51)
0.016 (0.4)
0.078 (2.0)
0.043 (1.1)
0.005 (0.13)
ANODE
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
www.fairchildsemi.com
4 OF 5
8/2/01
DS300357
SUBMINIATURE PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSB363
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300357
8/2/01
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