0.190 (4.83)
0.178 (4.52)
0.235 (5.97)
0.218 (5.54)
0.030 (0.76)
COLLECTOR
45
REFERENCE
SURFACE
0.800 (20.3)
MIN
0.050 (1.27)
0.215 (5.46) NOM
0.020 (0.51)
SQ 2PLCS
45
0.020 (0.51) RADIUS
EMITTER
0.100 (2.54) NOM
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
FEATURES
NPN Silicon Phototransistor
Package Type: Plastic TO-18
Matched Emitter: QED523
Narrow Reception Angle, 40
Daylight Filter
Package material and color: black epoxy
High Sensitivity
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
EMITTER
COLLECTOR
SCHEMATIC
QSD722
QSD723
QSD724
DESCRIPTION
The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300363
7/18/01
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7/18/01
DS300363
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16"
(1.6mm) minimum from housing.
5.
!
= 880 nm, AlGaAs.
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Collector-Emitter Voltage
V
CE
30
V
Emitter-Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
!
PS
--
880
--
nm
Reception Angle
"
--
20
--
Deg.
Collector-Emitter Dark Current
V
CE
= 10 V, Ee = 0
I
CEO
--
--
100
nA
Collector-Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter-Collector Breakdown
I
E
= 100 A
BV
ECO
5
--
--
V
On-State Collector Current
(5)
QSD722
0.6
--
3.8
QSD723
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
2.5
--
10.0
mA
QSD724
3.5
--
--
Saturation Voltage
(5)
Ee = 0.5 mW/cm
2
, I
C
= 0.6 mA
V
CE(sat)
--
0.4
--
V
Rise Time
V
CC
= 5 V, R
L
= 100
, I
C
= 0.2 mA
t
r
--
8
--
s
Fall Time
t
f
--
8
--
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722
QSD723
QSD724
DS300363
7/18/01
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Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Figure 4. Light Current vs. Collector - Emitter Voltage
E
e
- Radiant Intensity (mW/cm
2
)
0.1
1
I
C(ON)
- Light Current (mA)
10
0
10
1
10
2
V
CE
= 5V
GaAs Light Source
V
CE
- Collector-Emitter Voltage (V)
0
5
10
15
20
25
30
I
CEO
- Dar
k Current (nA)
10
-2
10
-1
10
0
10
1
V
CE
- Collector-Emitter Voltage (V)
0.1
1
10
I
L
- Nor
maliz
ed Light Current
10
-3
10
-2
10
-1
10
0
10
1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
T
A
= 25
o
C
2
Ie=1mW/cm
2
Ie=0.5mW/cm
2
Ie=0.2mW/cm
2
Ie=0.1mW/cm
2
T
A
- Ambient Temperature (
o
C)
25
50
75
100
I
CEO
- Nor
maliz
ed Dar
k Current
10
-1
10
0
10
1
10
2
10
3
10
4
Normalized to:
V
CE
= 25V
T
A
= 25
o
C
V
CE
=25V
V
CE
=10V
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722
QSD723
QSD724
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4 OF 4
7/18/01
DS300363
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722
QSD723
QSD724
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