PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
5/1/02
Page 1 of 4
2002 Fairchild Semiconductor Corporation
DESCRIPTION
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
NPN silicon phototransistor
Package type: Sidelooker
Medium wide reception angle, 50
Package material and color: black epoxy
Matched emitter: QEE113
Daylight filter
High sensitivity
0.175 (4.44)
0.200 (5.08)
0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
0.065 (1.65)
0.095 (2.41)
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
EMITTER
COLLECTOR
Collector
Emitter
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions unless
otherwise specified.
5/1/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
NOTES:
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
= 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Collector Emitter Voltage
V
CE
30
V
Emitter Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Sensitivity
PS
--
880
--
nM
Reception Angle
--
25
--
Deg.
Collector Emitter Dark Current
V
CE
= 10 V, E
e
= 0
I
CEO
--
--
100
nA
Collector-Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter-Collector Breakdown
I
E
= 100 A
BV
ECO
5
--
--
V
On-State Collector Current
(5)
QSE113
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
0.25
--
1.50
mA
On-State Collector Current
(5)
QSE114
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
1.00
--
--
mA
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA
V
CE(SAT)
--
--
0.4
V
Rise Time
I
C
= 1mA, V
CC
= 5V, R
L
= 100
t
r
--
8
--
s
Fall Time
t
f
--
8
--
s
5/1/02
Page 3 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE113 QSE114
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
E
e
- Radiant Intensity (mW/cm
2
)
0.1
1
I
C(ON)
- Light Current (mA)
10
-1
10
0
10
1
V
CE
= 5V
GaAs Light Source
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
V
CE
- Collector-Emitter Voltage (V)
0
5
10
15
20
25
30
I
CEO
- Dar
k Current (nA)
10
-3
10
-2
10
-1
10
0
10
1
V
CE
- Collector-Emitter Voltage (V)
0.1
1
10
I
L
- Nor
maliz
ed Light Current
10
-2
10
-1
10
0
10
1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25
C
Ie = 0.5mW/cm
2
Ie = 0.2mW/cm
2
Ie = 0.1mW/cm
2
Ie = 1mW/cm
2
T
A
- Ambient Temperature ( C)
25
50
75
100
I
CEO
- Nor
maliz
ed Dar
k Current
10
-1
10
0
10
1
10
2
10
3
10
4
Normalized to:
V
CE
= 25V
T
A
= 25
C
V
CE
= 25V
V
CE
= 10V
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