PACKAGE DIMENSIONS
SCHEMATIC
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
5/1/02
Page 1 of 4
2002 Fairchild Semiconductor Corporation
DESCRIPTION
The QSE122 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
FEATURES
NPN silicon phototransistor
Package type: Sidelooker
Medium wide reception angle, 50
Package material and color: black epoxy
Matched emitter: QEE113
Daylight filter
High sensitivity
0.175 (4.44)
0.200 (5.08)
0.050 (1.27)
0.020 (0.51) SQ.
(2X)
0.500 (12.70)
MIN
0.065 (1.65)
0.095 (2.41)
0.100 (2.54)
0.100 (2.54)
NOM
0.030 (0.76)
0.087 (2.22)
EMITTER
COLLECTOR
Collector
Emitter
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions unless
otherwise specified.
5/1/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
NOTES:
1. Derate power dissipation linearly 1.33 mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
= 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Collector Emitter Voltage
V
CE
30
V
Emitter Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Sensitivity
PS
--
880
--
nM
Reception Angle
--
25
--
Deg.
Collector Emitter Dark Current
V
CE
= 10 V, E
e
= 0
I
CEO
--
--
100
nA
Collector-Emitter Breakdown
I
C
= 1 mA
BV
CEO
30
--
--
V
Emitter-Collector Breakdown
I
E
= 100 A
BV
ECO
5
--
--
V
On-State Collector Current
(5)
QSE122
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
C(ON)
3.0
--
12.0
mA
Saturation Voltage
(5)
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA
V
CE(SAT)
--
--
0.4
V
Rise Time
I
C
= 1mA, V
CC
= 5V, R
L
= 100
t
r
--
8
--
s
Fall Time
t
f
--
8
--
s
5/1/02
Page 3 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
Figure 1. Light Current vs. Radiant Intensity
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
Figure 5. Dark Current vs. Ambient Temperature
Figure 2. Angular Response Curve
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
E
e
- Radiant Intensity (mW/cm
2
)
0.1
1
I
C(ON)
- Light Current (mA)
10
-1
10
0
10
1
10
2
V
CE
= 5V
GaAs Light Source
V
CE
- Collector-Emitter Voltage (V)
0
5
10
15
20
25
30
I
CEO
- Dar
k Current (nA)
10
-3
10
-2
10
-1
10
0
10
1
V
CE
- Collector-Emitter Voltage (V)
0.1
1
10
I L
- Nor
maliz
ed Light Current
10
-2
10
-1
10
0
10
1
10
2
Ie=1mW/cm2
Ie=0.5mW/cm2
Ie=0.2mW/cm2
Ie=0.1mW/cm2
Normalized to:
VCE=5V
Ie=0.5mW/cm2
TA=25C
TA - Ambient Temperature (C)
25
50
75
100
I CEO
- Nor
maliz
ed Dar
k Current
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Normalized to:
V
CE
= 25V
T
A
= 25
C
V
CE
= 25V
V
CE
= 10V
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
5/1/02
Page 4 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE122
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