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2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
RF1K49154
2A, 60V, 0.130 Ohm, Dual N-Channel,
LittleFETTM Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
the latest manufacturing process technology. This process,
which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. These devices can be operated directly from
integrated circuits.
Formerly developmental type TA49154.
Features
2A, 60V
r
DS(ON)
= 0.130
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49154
MS-012AA
RF1K49154
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4915496.
G1(2)
D1(8)
S1(1)
D1(7)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
RF1K49154 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current Continuous
(Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
2
Refer to Peak Current Curve
A
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 12)
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 11)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
-
-
1
A
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
10
A
Drain to Source On Resistance
r
DS(ON)
I
D
= 2A, V
GS
= 10V, (Figures 9, 10)
-
-
0.130
Turn-On Time
t
ON
V
DD
= 30V, I
D
2A,
R
L
= 15
, V
GS
= 10V,
R
GS
= 25
(Figure 14)
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
25
-
ns
Turn-Off Delay Time
t
d(OFF)
-
70
-
ns
Fall Time
t
f
-
35
-
ns
Turn-Off Time
t
OFF
-
-
155
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 48V,
I
D
= 2A,
R
L
= 24
(Figure 14)
-
26
32
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
14
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
0.8
1.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 13)
-
340
-
pF
Output Capacitance
C
OSS
-
140
-
pF
Reverse Transfer Capacitance
C
RSS
-
40
-
pF
Thermal Resistance Junction to Ambient
R
JA
Pulse Width = 1s
Device Mounted on FR-4 Material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 2A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
s
-
-
62
ns
RF1K49154
2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
Typical Performance Curves
T
A
= 25
o
C, Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
I
P
A
T
I
ON M
U
L
T
IP
L
I
E
R
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
1
0.5
0
25
50
75
100
125
150
2
1.5
I
D
,
DRAIN CUR
RE
NT
(
A
)
T
A
, AMBIENT TEMPERATURE (
o
C)
2.5
t , RECTANGULAR PULSE DURATION (s)
10
-4
10
-2
10
-1
10
0
10
1
0.01
0.1
10
-3
10
2
P
DM
t
1
t
2
Z
JA
,
NORM
AL
I
Z
ED
T
H
ERM
A
L
IM
PED
ANCE
SINGLE PULSE
10
-5
10
3
0.001
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
1
5
DUTY CYCLE
0.5
0.2
0.1
0.05
0.01
0.02
DESCENDING ORDER
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
200
0.1
10
20
0.1
1
I
D
, DR
AIN CURRENT
(
A
)
V
DSS
(MAX)
= 60V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10ms
5ms
100
T
J
= MAX RATED
T
A
= 25
o
C
t , PULSE WIDTH (s)
100
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
DM
, PEAK CUR
RE
NT
CAP
ABI
L
I
T
Y
(
A
)
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 20V
T
A
= 25
o
C
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
RF1K49154
2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
T
A
= 25
o
C, Unless Otherwise Specified (Continued)
1
10
100
5
0.1
10
1
I
AS
, A
V
AL
ANCHE CU
RRE
N
T
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
5
10
0
1.5
3.0
4.5
6.0
7.5
15
20
I
D
, DRAI
N CURRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 8V
V
GS
= 10V
V
GS
= 9V
V
GS
= 20V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
PULSE DURATION = 80
s
T
A
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0
4
8
12
16
20
I
D(
ON)
, ON-
S
T
A
T
E
DRAIN CURRENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
150
o
C
-55
o
C
25
o
C
V
DD
= 15V
100
200
300
400
500
0
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(
O
N)
,
ON-
S
T
A
T
E
RE
SIS
T
ANCE (
m
)
2
6
8
10
I
D
= 0.5A
I
D
= 4A
I
D
= 2A
I
D
= 1A
V
DD
= 15V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
0.5
1
1.5
2
-80
-40
0
40
80
120
160
NORM
AL
IZ
ED ON
RES
I
S
T
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
s
V
GS
= 10V, I
D
= 2A
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0.5
0.75
1
1.25
1.5
NORM
AL
I
Z
ED G
A
T
E
T
HRESHOL
D V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
RF1K49154
2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
T
A
= 25
o
C, Unless Otherwise Specified (Continued)
1.5
1.25
1
0.75
0.5
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
I
Z
ED DRAI
N T
O
S
O
URCE
BR
E
AKD
O
W
N V
O
L
T
A
G
E
I
D
= 250
A
500
400
200
0
0
5
10
15
20
25
C, CAP
A
C
IT
A
NCE
(
p
F
)
C
RSS
300
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
60
45
30
15
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
10
7.5
5
2.5
0
V
DS
,
DRAIN T
O
SOURCE
V
O
L
T
A
GE (
V
)
V
GS
, GA
T
E
T
O
SO
URCE V
O
L
T
A
G
E (
V
)
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
R
L
= 30
I
G(REF)
= 0.26mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49154
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