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2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
RFP25N06, RF1S25N06, RF1S25N06SM
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Features
25A, 60V
r
DS(ON)
= 0.047
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO- 220AB
JEDEC TO-263AB
JEDEC TO-262AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N06
TO-220AB
RFP25N06
RF1S25N06
TO-262AA
F1S25N06
RF1S25N06SM
TO-263AB
F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP25N06,
RF1S25N06, RF1S25N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
25
(Figure 5)
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
(Figure 6)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
0.48
W
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
60
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V
T
C
= 25
o
C
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 25A, V
GS
= 10V (Figure 9)
-
-
0.047
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 12.5A
R
L
= 2.4
, V
GS
= 10V
R
GS
= 10
(Figure 13)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
45
-
ns
Fall Time
t
f
-
22
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to 20V
V
DD
= 48V, I
D
= 25A,
R
L
= 1.92
I
g(REF)
= 0.75mA
(Figure 13)
-
-
80
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0 to 10V
-
-
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to 2V
-
-
3
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
-
975
-
pF
Output Capacitance
C
OSS
-
330
-
pF
Reverse Transfer Capacitance
C
RSS
-
95
-
pF
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
R
JA
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 25A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 25A, dI
SD
/dt = 100A/
s
-
-
125
ns
RFP25N06, RF1S25N06, RF1S25N06SMS
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
0
25
50
75
100
125
150
20
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
175
25
30
15
10
t1, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z
J
C
x R
J
C
+ TC
PDM
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
THERMAL IMPED
ANCE
Z
JC
,
NORMALIZED
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
s
1ms
10ms
DC
100ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
200
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
,
PEAK CURRENT (A)
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 20V
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
------------------------
=
V
GS
= 10V
T
C
= 25
o
C
RFP25N06, RF1S25N06, RF1S25N06SM
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.1
1
10
10
0.01
1
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (
s)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
0
10
30
0
2
4
6
8
40
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 7V
V
GS
= 20V
60
70
V
GS
= 8V
V
GS
= 10V
50
20
V
GS
= 4.5V
V
GS
= 5V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0
10
30
40
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
50
70
175
o
C
-55
o
C
25
o
C
60
20
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN
T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
s
V
GS
= 10V, I
D
= 25A
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0
0.5
1.0
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.5
V
GS
= V
DS
I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
200
I
D
= 250
A
RFP25N06, RF1S25N06, RF1S25N06SM
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
1600
1200
400
0
0
5
10
15
20
25
C,
CAP
A
CIT
ANCE (pF)
800
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
30
15
0
20
I
g REF
(
)
I
g ACT
(
)
--------------------
t, TIME (
s)
80
I
g REF
(
)
I
g ACT
(
)
--------------------
10
5.0
2.5
0
V
DS
,
DRAIN
T
O
SOURCE
V
O
L
T
A
GE (V)
V
GS
,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
60
7.5
45
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 2.4
I
g(REF)
= 0.75mA
V
GS
= 10V
t
P
V
GS
0.01
L
IAS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP25N06, RF1S25N06, RF1S25N06SM
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