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Электронный компонент: RF1S60P03

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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1995
4-51
S E M I C O N D U C T O R
RFG60P03, RFP60P03,
RF1S60P03, RF1S60P03SM
60A, 30V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
60A, 30V
r
DS(ON)
= 0.027
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The RFG60P03, RFP60P03, RF1S60P03 and
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49045.
Symbol
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG60P03
TO-247
RFG60P03
RFP60P03
TO-220AB
RFP60P03
RF1S60P03
TO-262AA
F1S60P03
RF1S60P03SM
TO-263AB
F1S60P03
NOTE: When ordering use the entire part number.
D
G
S
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
60
Refer to Peak Current Curve
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to UIS Curve
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
176
1.17
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
-55 to +175
o
C
File Number
3951.1
4-52
Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified.
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
-30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V,
V
GS
= 0V
T
C
= +25
o
C
-
-
-1
A
T
C
= +150
o
C
-
-
-50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 60A, V
GS
= -10V
-
-
0.027
Turn-On Time
t
ON
V
DD
= -15V, I
D
= 60A
R
L
= 0.25
, V
GS
= -10V
R
GS
= 2.5
-
-
140
ns
Turn-On Delay Time
t
D(ON)
-
20
-
ns
Rise Time
t
R
-
75
-
ns
Turn-Off Delay Time
t
D(OFF)
-
35
-
ns
Fall Time
t
F
-
40
-
ns
Turn-Off Time
t
OFF
-
-
115
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to -20V
V
DD
= -24V,
I
D
= 60A,
R
L
= 0.4
-
190
230
nC
Gate Charge at 10V
Q
G(-10)
V
GS
= 0 to -10V
-
100
120
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to -2V
-
7.5
9
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
3000
-
pF
Output Capacitance
C
OSS
-
1500
-
pF
Reverse Transfer Capacitance
C
RSS
-
525
-
pF
Thermal Resistance, Junction to Case
R
JC
-
-
0.85
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
-
-
80
o
C/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= -60A
-
-
-1.75
V
Reverse Recovery Time
t
RR
I
SD
= -60A, dI
SD
/dt = -100A/
s
-
-
200
ns
4-53
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
-500
-100
-10
-1
-1
-10
-60
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
T
C
= +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
s
10ms
100ms
DC
V
DSS
MAX = -30V
I
D
,
DRAIN CURRENT (A)
10
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t , RECTANGULAR PULSE DURATION (s)
Z
JC,
NORMALIZED
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE
t
2
-50
-40
-30
-20
-10
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-60
-70
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-10
2
-10
3
t , PULSE WIDTH (ms)
T
C
= +25
o
C
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
------------------------
=
-50
0
0.0
-1.5
-3.0
-4.5
-6.0
-7.5
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
PULSE DURATION = 250
s, T
C
= +25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-30
-60
-90
-120
V
GS
= -4.5V
V
GS
= -20V
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D(ON)
, ON ST
A
TE DRAIN CURRENT (A)
0
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DD
= -15V
+175
o
C
+25
o
C
-30
-60
-120
-90
4-54
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250
s, V
GS
= -10V, I
D
= -60A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
r
DS(ON)
, NORMALIZED ON RESIST
ANCE
V
GS
= V
DS
, I
D
= - 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
160
120
200
THRESHOLD VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS(TH)
, NORMALIZED GA
TE
I
D
= -250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
BV
DSS
,
NORMALIZED DRAIN-T
O-SOURCE
BREAKDOWN VOL
T
AGE
T
J
, JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
POWER DISSIP
A
TION MUL
TIPLIER
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
-5
-10
-15
-20
-25
C
,
CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5000
-30.0
-22.5
-15.0
-7.5
0.0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 0.5
I
G(REF)
= -3mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN-SOURCE VOL
T
AGE (V)
V
GS
,
G
A
TE-SOURCE VOL
T
AGE (V)
V
GS
= -10V
4-55
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
-200
-100
-10
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
STARTING T
J
= +150
o
C
STARTING T
J
= +25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
If R
0
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON