CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1995
3-45
S E M I C O N D U C T O R
RFP70N03, RF1S70N03,
RF1S70N03SM
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RFP70N03, RF1S70N03,
RF1S70N03SM
UNITS
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
30
V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
70
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
200
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
(Refer to UIS Curve)
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Above T
C
= +25
o
C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
1.0
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +175
o
C
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Symbol
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
A
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
G
D
S
Features
70A, 30V
r
DS(ON)
= 0.010
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
+175
o
C Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Chan-
nel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approach-
ing those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regula-
tors, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
Formerly developmental type TA49025.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
File Number
3404.2
3-46
Specifications RFP70N03, RF1S70N03, RF1S70N03SM
Electrical Specifications
At Case Temperature (T
C
) = +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V
T
C
= 25
o
C
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
50
A
Gate-Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 70A, V
GS
= 10V
-
-
0.010
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 70A
-
-
80
ns
Turn-On Delay Time
t
D(ON)
R
L
= 0.214
, V
GS
= +10V
-
20
-
ns
Rise Time
t
R
R
GS
= 2.5
-
20
-
ns
Turn-Off Delay Time
t
D(OFF)
-
40
-
ns
Fall Time
t
F
-
25
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0 to 20V
V
DD
= 24V,
I
D
= 70A,
R
L
= 0.343
-
215
260
nC
Gate Charge at 10V
Q
G(10)
V
GS
= 0 to 10V
-
120
145
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0 to 2V
-
6.5
8.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
-
3300
-
pF
Output Capacitance
C
OSS
f = 1MHz
-
1750
-
pF
Reverse Transfer Capacitance
C
RSS
-
750
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
1.0
o
C/W
Thermal Resistance Diode
Junction to Ambient
R
JA
-
-
80
o
C/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Diode Forward Voltage
V
SD
I
SD
= 70A
-
-
1.5
V
Reverse Recovery Time
t
RR
I
SD
= 70A, dI
SD
/dt = 100A/
s
-
-
125
ns
3-47
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
FIGURE 1. SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
300
100
10
1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
CASE TEMPERATURE (T
C
) = +25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = 30V
100
s
1ms
10ms
100ms
DC
I
D
, DRAIN CURRENT (A)
300
I
DM
100
0.01
10
0.10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
t
AV
= (L) (I
AS
)/(1.3 x RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R) ln [(I
AS
x R)/(1.3 x RATED BV
DSS
- V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
1.0
10.0
0
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
D
, DRAIN CURRENT (A)
0
T
C
, CASE TEMPERATURE (
o
C)
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
175
150
POWER DISSIP
A
TION MUL
TIPLIER
PULSE DURATION = 250
s, T
C
= +25
o
C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0.0
1.5
3.0
4.5
6.0
7.5
I
D
, DRAIN CURRENT (A)
0
40
80
120
160
200
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 10V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
0.0
2.0
4.0
6.0
8.0
10.0
I
D(ON)
, ON ST
A
TE DRAIN CURRENT (A)
0
40
80
120
160
200
+25
o
C
-55
o
C
+175
o
C
PULSE TEST
PULSE DURATION = 250
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
3-48
RFP70N03, RF1S70N03, RF1S70N03SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves
(Continued)
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
r
DS(ON)
, NORMALIZED ON RESIST
ANCE
PULSE DURATION = 250
s, V
GS
= 10V, I
D
= 70A
2.0
1.6
1.2
0.8
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS(TH)
, NORMALIZED
0.4
V
GS
= V
DS
, I
D
= 250
A
GA
TE THRESHOLD VOL
T
AGE
I
D
= 250
A
2.0
1.6
1.2
0.4
0.0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
BV
DSS
, NORMALIZED DRAIN-T
O-SOURCE
0.8
BREAKDOWN VOL
T
AGE
0
0
5
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C, CAP
ACIT
ANCE (pF)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
= 0V, FREQUENCY (f) = 1MHz
CISS
COSS
CRSS
10
-5
Z
JC
, THERMAL RESPONSE
t, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
10
1
NOTES:
1. DUTY FACTOR, D = t
1
/t
2
2. PEAK T
J
= P
DM
x (Z
JC
) +T
C
SINGLE PULSE
0.2
0.1
0.05
0.02
0.5
P
DM
t
1
t
2
0.01
30.0
22.5
15.0
7.5
0.0
10.0
7.5
5.0
2.5
0.0
t, TIME (
s)
20
I
G
REF
(
)
I
G
ACT
(
)
----------------------
80
I
G
REF
(
)
I
G
ACT
(
)
----------------------
V
DS
, DRAIN SOURCE VOL
T
AGE (V)
V
GS
, GA
TE SOURCE VOL
T
AGE (V)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 0.43
I
G(REF)
= 3.0mA
V
GS
= 10V
3-49
RFP70N03, RF1S70N03, RF1S70N03SM
Test Circuits and Waveforms
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
t
P
V
GS
0.01
L
I
L
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
t
D(ON)
t
R
90%
10%
V
DS
90%
10%
t
F
t
D(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
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