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2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B
RFD16N05, RFD16N05SM
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Features
16A, 50V
r
DS(ON)
= 0.047
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N05
TO-251AA
F16N05
RFD16N05SM
TO-252AA
F16N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
G
D
S
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD16N05, RFD16N05SM,
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
50
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
16
Refer to Peak Current Curve
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Refer to Figure 5
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
0.48
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
C
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 16A, V
GS
= 10V (Figure 9)
-
-
0.047
Turn-On Time
t
(ON)
V
DD
= 25V, I
D
= 8A, R
L
= 3.125
,
V
GS
= 10V, R
GS
= 25
(Figure 13)
-
-
65
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
55
-
ns
Fall Time
t
f
-
30
-
ns
Turn-Off Time
t
(OFF)
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 40V, I
D
16A,
R
L
= 2.5
I
g(REF)
= 0.8mA
(Figure 13)
-
-
80
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
-
45
nC
Threshold Gate Charge
Q
(TH)
V
GS
= 0V to 2V
-
-
2.2
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
-
900
-
pF
Output Capacitance
C
OSS
-
325
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Thermal Resistance Junction to Case
R
JC
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251 and TO-252
-
-
100
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 16A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 16A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
250
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD16N05, RFD16N05SM
2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TENPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
8
4
0
25
50
75
100
125
150
12
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
16
175
20
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
10
-4
2
THERMAL IMPED
ANCE
Z
JC
,
NORMALIZED
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
s
10ms
1ms
DC
100ms
V
DSS(MAX)
= 50V
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
,
PEAK CURRENT (A)
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 20V
V
GS
= 10V
T
C
= 25
o
C
RFD16N05, RFD16N05SM
2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.1
1
10
10
0.01
100
1
I
AS
,
A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
10
20
0
1
2
3
4
30
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 7V
40
50
V
GS
= 8V
V
GS
= 10V
V
GS
= 20V
V
GS
= 6V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0
10
20
30
I
DS(ON)
,
DRAIN
T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
50
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN
T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
s
V
GS
= 10V, I
D
= 16A
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0
0.5
1.0
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.5
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN
T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
200
I
D
= 250
A
RFD16N05, RFD16N05SM
2002 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
1600
1200
400
0
0
5
10
15
20
25
C,
CAP
A
CIT
ANCE (pF)
800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
25
12.5
0
20
I
G REF
(
)
I
G ACT
(
)
-------------------------
t, TIME (ms)
80
I
G REF
(
)
I
G ACT
(
)
---------------------
10
5
2.5
0
V
DS
,
DRAIN
T
O
SOURCE
V
O
L
T
A
GE (V)
V
GS
,
GA
TE
T
O
SOURCE
V
O
L
T
A
GE (V)
50
7.5
37.5
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 3.125
I
G(REF)
= 0.8mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFD16N05, RFD16N05SM
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