2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
RHRD660, RHRD660S
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (t
rr
< 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <30ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRD660
TO-251
RHR660
RHRD660S
TO-252
RHR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRD660, RHRD660S
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
600
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
600
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
600
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 152
o
C)
6
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
12
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
60
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
50
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
PKG
260
o
C
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 6A
-
-
2.1
V
I
F
= 6A, T
C
= 150
o
C
-
-
1.7
V
I
R
V
R
= 600V
-
-
100
A
V
R
= 600V, T
C
= 150
o
C
-
-
500
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
s
-
-
30
ns
I
F
= 6A, dI
F
/dt = 200A/
s
-
-
35
ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
s
-
16
-
ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
s
-
8.5
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
s
-
45
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
20
-
pF
R
JC
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE
V
F
, FORWARD VOLTAGE (V)
1
30
0.5
10
0
0.5
2.5
1
2
1.5
I
F
,
FOR
W
ARD CURRENT (A)
3
25
o
C
175
o
C
100
o
C
0
600
400
300
200
100
0.01
0.1
1
10
1000
100
500
100
o
C
175
o
C
25
o
C
V
R
, REVERSE VOLTAGE (V)
I
R
,
REVERSE CURRENT (
A)
RHRD660, RHRD660S
2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0
20
30
25
tb
15
ta
10
t,
RECO
VER
Y
TIMES
(ns)
5
1
6
0.5
trr
T
C
= 25
o
C, dI
F
/dt = 200A/
s
ta
trr
tb
I
F
, FORWARD CURRENT (A)
0
50
40
30
20
t,
RECO
VER
Y
TIMES
(ns)
10
1
6
0.5
T
C
= 100
o
C, dI
F
/dt = 200A/
s
tb
ta
trr
I
F
, FORWARD CURRENT (A)
0
60
75
45
t,
RECO
VER
Y
TIMES
(ns)
30
15
1
6
0.5
T
C
= 175
o
C, dI
F
/dt = 200A/
s
5
1
0
155
160
170
150
175
165
2
3
4
DC
T
C
, CASE TEMPERATURE (
o
C)
SQ. WAVE
I
F(A
V
)
,
A
VERA
GE FOR
W
ARD CURRENT (A)
6
140
145
V
R
, REVERSE VOLTAGE (V)
20
10
0
40
0
50
100
150
200
C
J
,
JUNCTION CAP
A
CIT
ANCE (pF)
50
30
RHRD660, RHRD660S
2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1A
L = 20mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRD660, RHRD660S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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