RHRG30100CC 30A, 1000V Hyperfast Dual Diode
2002 Fairchild Semiconductor Corporation
RHRG30100CC Rev. B
RHRG30100CC
30A, 1000V Hyperfast Dual Diode
The RHRG30100CC is a hyperfast dual diode with soft
recovery characteristics (t
rr
< 65ns). It has half the recovery
time of ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49064.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <65ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRG30100CC
TO-247
RHR30100C
NOTE: When ordering, use the entire part number.
K
A
1
A
2
ANODE 2
CATHODE
ANODE 1
(BOTTOM
SIDE METAL)
CATHODE
Absolute Maximum Ratings
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
RHRG30100CC UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
1000
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 95
o
C)
30
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
70
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
325
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Avalanche Energy (see Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RHRG30100CC Rev. B
Electrical Specifications
(Per Leg) T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 30A
-
-
3.0
V
I
F
= 30A, T
C
= 150
o
C
-
-
2.5
V
I
R
V
R
= 1000V
-
-
250
A
V
R
= 1000V, T
C
= 150
o
C
-
-
1.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
65
ns
I
F
= 30A, dI
F
/dt = 100A/
s
-
-
75
ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
s
-
35
-
ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
s
-
33
-
ns
Q
RR
I
F
= 30A, dI
F
/dt = 100A/
s
-
200
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
100
-
pF
R
JC
-
-
1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(see Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
175
o
C
25
o
C
V
F
, FORWARD VOLTAGE (V)
1
100
10
0
1
5
2
4
3
I
F
,
FOR
W
ARD CURRENT (A)
6
300
100
o
C
0
600
400
200
10
0.1
1
100
1000
800
V
R
, REVERSE VOLTAGE (V)
1200
25
o
C
100
o
C
0.03
175
o
C
I
R
,
REVERSE CURRENT (
A)
RHRG30100CC
2002 Fairchild Semiconductor Corporation
RHRG30100CC Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0
60
70
40
30
10
t,
RECO
VER
Y
TIMES
(ns)
tb
trr
ta
80
50
20
30
1
10
T
C
= 25
o
C, dI
F
/dt = 100A/
s
I
F
, FORWARD CURRENT (A)
0
100
125
75
50
25
t,
RECO
VER
Y
TIMES
(ns)
30
1
10
tb
trr
150
ta
200
175
T
C
= 100
o
C, dI
F
/dt = 100A/
s
I
F
, FORWARD CURRENT (A)
0
100
150
250
50
t,
RECO
VER
Y
TIMES
(ns)
30
1
10
300
200
trr
tb
ta
T
C
= 175
o
C, dI
F
/dt = 100A/
s
30
5
0
25
150
100
175
125
10
15
20
DC
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V
)
,
A
VERA
GE FOR
W
ARD CURRENT (A)
25
50
75
SQ. WAVE
V
R
, REVERSE VOLTAGE (V)
50
100
0
50
100
150
200
200
150
C
J
,
JUNCTION CAP
A
CIT
ANCE (pF)
250
0
RHRG30100CC
2002 Fairchild Semiconductor Corporation
RHRG30100CC Rev. B
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRG30100CC
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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