2004 Fairchild Semiconductor Corporation
June 2004
RMPA29000 Rev. D
RMPA29000
RMPA29000
2730 GHZ 1 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor's RMPA29000 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA29000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15m gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
23dB small signal gain (typ.)
30dBm Pout at 1dB compression (typ.)
Circuit contains individual source vias
Chip size 5.20mm x 2.95mm
Absolute Ratings
Symbol
Parameter
Ratings
Units
Vd
Positive DC Voltage (+5V Typical)
+6
V
Vg
Negative DC Voltage
-2
V
Vdg
Simultaneous (VdVg)
+8
V
I
D
Positive DC Current
1092
mA
P
IN
RF Input Power (from 50
source)
+18
dBm
T
C
Operating Baseplate Temperature
-30 to +85
C
T
STG
Storage Temperature Range
-55 to +125
C
R
JC
Thermal Resistance (Channel to Backside)
20
C/W
Device
2004 Fairchild Semiconductor Corporation
RMPA29000 Rev. D
RMPA29000
Electrical Characteristics
(At 25C), 50
system, Vd = +5V, Quiescent current (Idq) = 700mA
Note:
1. Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 700 mA.
Parameter
Min
Typ
Max
Units
Frequency Range
27
30
GHz
Gate Supply Voltage (Vg)
1
-0.4
V
Gain Small Signal (Pin = -1dBm)
18
23
dB
Gain Variation vs. Frequency
1
dB
Power Output at 1dBm Compression
30
dBm
Power Output Saturated: (Pin = +10.5dBm)
28.5
30.5
dBm
Drain Current at Pin = -1dBm
700
mA
Drain Current at P1dB Compression
850
mA
Power Added Efficiency (PAE): at P1dB
23
%
OIP3 (16dBm/tone)
37
dBm
Input Return Loss (Pin = -1dBm)
10
dB
Output Return Loss (Pin = -1dBm)
10
dB
2004 Fairchild Semiconductor Corporation
RMPA29000 Rev. D
RMPA29000
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap
between the chip and the substrate material.
Figure 1. Functional Block Diagram
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 5.210mm x 2.946mm x 50m Typical. Back of chip is RF and DC Ground)
MMIC CHIP
DRAIN SUPPLY
(VDA & VDB)
RF OUT
RF IN
GROUND
(Back of the Chip)
GATE SUPPLY
(VGA & VGB)
Dimensions in mm
0.0
0.122
0.236
4.445
5.072
5.210
2.946
2.672
1.651
1.461
1.285
0.254
2004 Fairchild Semiconductor Corporation
RMPA29000 Rev. D
RMPA29000
RF IN
RF OUT
10000pF
100pF
10000pF
DRAIN SUPPLY (Vd = +5V)
(Connect to both VDA & VDB)
GATE SUPPLY (Vg)
(VGA and/or VGB)
GROUND
(Back of Chip)
100pF
MMIC CHIP
BOND WIRE Ls
L
L
L
L
BOND WIRE Ls
Figure 3. Recommended Application Schematic Circuit Diagram
2004 Fairchild Semiconductor Corporation
RMPA29000 Rev. D
RMPA29000
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
5 MIL THICK
ALUMINA
50
5 MIL THICK
ALUMINA
50
DIE-ATTACH
80Au/20Sn
Vd (POSITIVE)
Vd (POSITIVE)
Vg (NEGATIVE)
Vg (NEGATIVE)
2 MIL GAP
L < 0.015"
(4 Places)
RF INPUT
RF OUTPUT
100pF
100pF
100pF
100pF
10000pF
10000pF
10000pF
10000pF
Figure 4. Recommended Assembly and Bonding Diagram
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