2004 Fairchild Semiconductor Corporation
June 2004
RMWB33001 Rev. C
RMWB33001
RMWB33001
33 GHz Buffer Amplifier MMIC
General Description
The RMWB33001 is a 4-stage GaAs MMIC amplifier
designed as a 33 GHz Buffer Amplifier for use in point to
point and point to multi-point radios, and various communi-
cations applications. In conjunction with other Fairchild RF
amplifiers, multipliers and mixers it forms part of a complete
38 GHz transmit/receive chipset. The RMWB33001 utilizes
our 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier
applications.
Features
4 mil Substrate
Small-signal Gain 24dB (typ.)
Saturated Power Out 19dBm (typ.)
Voltage Detector Included to Monitor Pout
Chip size 3.2mm x 1.2mm
Absolute Ratings
Symbol
Parameter
Ratings
Units
Vd
Positive DC Voltage (+4V Typical)
+6
V
Vg
Negative DC Voltage
-2
V
Vdg
Simultaneous (VdVg)
8
V
I
D
Positive DC Current
173
mA
P
IN
RF Input Power (from 50
source)
+8
dBm
T
C
Operating Baseplate Temperature
-30 to +85
C
T
STG
Storage Temperature Range
-55 to +125
C
R
JC
Thermal Resistance (Channel to Backside)
130
C/W
Device
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Electrical Characteristics
(At 25C), 50
system, Vd = +4V, Quiescent Current Idq = 112mA
Note:
1:
Typical range of gate voltage is -0.5 to 0V to set Idq of 112mA.
Parameter
Min
Typ
Max
Units
Frequency Range
32
35
GHz
Gate Supply Voltage
1
(Vg)
-0.2
V
Gain Small Signal (Pin = -15dBm)
20
24
dB
Gain Variation vs. Frequency
2.0
dB
Power Output Saturated: (Pin = +1dBm)
17
19
dBm
Drain Current at Psat
120
mA
Power Added Efficiency (PAE): at Psat
15
%
Input Return Loss (Pin = -15dBm)
12
dB
Output Return Loss (Pin = -15dBm)
12
dB
DC Detector Voltage at Pout = 18dBm
1.0
V
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs
compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper
tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of
withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy
solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated
and is used as RF and DC ground.
These GaAs devices should be handled with care and
stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and
should be handled with appropriate precaution including the
use of wrist grounding straps. All die attach and wire/ribbon
bond equipment must be well grounded to prevent static
discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil
thick gold ribbon with lengths as short as practical allowing
for appropriate stress relief. The RF input and output bonds
should be typically 0.012" long corresponding to a typical 2
mil gap between the chip and the substrate material.
Figure 1. Functional Block Diagram
1
Note:
1:
Detector delivers >0.1V DC into 3k
load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
Drain Supply
Vd1
Drain Supply
Vd2
MMIC Chip
RF IN
Gate Supply
Vg
Ground
(Back of Chip)
RF OUT
Output Power
Detector Voltage
Vdet
Drain Supply
Vd3
Drain Supply
Vd4
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Figure 2. Schematic of Application Circuit
Note:
1:
Detector delivers >0.1V DC into 3k
load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad.
Figure 3. Chip Layout and Bond Pad Locations
Chip Size is 3.19mm x 1.19mm X 100m. Back of chip is RF and DC Ground.
Ground
(Back of Chip)
RF IN
RF OUT
Bond Wires
100 pF
100 pF
100 pF
100 pF
Bond Wires
10,000 pF
100 pF
Bond Wires
Bond Wires
Drain Supply
Vd =4 V
Gate Supply Vg
10,000 pF
100 pF
Output Power
Detector Voltage Vdet
10,000 pF
MMIC Chip
3 k
0.00
0.10
0.415
0.57
0.725
1.09
1.19
0.00
0.10
0.415
0.57
0.725
1.09
1.19
0.10
0.60
2.85 3.09 3.19
3.19
0.00
0.82
1.34
1.83
2.58
0.00
Dimensions in mm
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Test Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias
supply voltage of -1.5V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq = 112mA.
Step 5:
After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Figure 4. Recommended Assembly Diagram
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50
5 mil Thick
Alumina
50
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
10,000pF
100pF
10,000pF
10,000pF
100pF
100pF
100pF
100pF
Drain Supply
Vd = 4 V
Gate Supply V
g
Output Power
Detector Voltage V
det
3k
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
RMWB33001
Performance Data
16
18
20
22
24
26
30
31
32
33
34
35
36
37
Frequency (GHz)
S21 (dB)
-25
-20
-15
-10
-5
0
S11, S22 (dB)
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
S22
S22
S21
S21
S11
S11
S21 (dB)
S11, S22 (dB)
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
10
11
12
13
14
15
16
17
18
19
20
-12
-10
-8
-6
-4
-2
0
Pin (dBm)
Pout (dBm)
16
17
18
19
20
21
22
23
24
25
26
Gain (dB)
13
14
15
16
17
18
19
20
21
22
31
32
33
34
35
36
Frequency (GHz)
P3dB (dBm), G3dB (dB)
RMWB33001 33 GHz BA, Typical Small Signal Performance
50
Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25
C
RMWB33001 33 GHz BA, Typical Small Signal Performance
50
Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25
C
RMWB33001 33 GHz BA, Power Output and Gain vs. Power In
50
Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25
C
RMWB33001 33 GHz BA, Power Output and Gain at 3 dB
Compression vs. Frequency and Temperature,
50
FixtureMeasurements, Vd=4 V, Idq = 112 mA
32 GHz
G3dB (T=25
C)
P3dB (T=25
C)
P3dB (T=75
C)
G3dB (T=75
C)
33 GHz
34 GHz
35 GHz
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