www.docs.chipfind.ru
2002 Fairchild Semiconductor Corporation
RURP3020 Rev. B
RURP3020
30A, 200V Ultrafast Diode
The RURP3020 is an ultrafast diode (t
rr
< 45ns) with soft
recovery characteristics. It has a low forward voltage drop
and is of planar, silicon nitride passivated, ion-implanted,
epitaxial construction.
This device is intended for use as an energy steering/
clamping diode and rectifier in a variety of switching power
supplies and other power switching applications. Its low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formally development type TA09645.
Symbol
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <45ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Avalanche Energy Rated
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RURP3020
TO-220AC
RURP3020
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURP3020
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
200
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
200
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
200
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 145
o
C)
30
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave 20kHz)
70
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
325
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125
W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-55 to 175
o
C
Data Sheet
January 2002
2002 Fairchild Semiconductor Corporation
RURP3020 Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 30A
-
-
1.0
V
I
F
= 30A, T
C
= 150
o
C
-
-
0.85
V
I
R
V
R
= 200V
-
-
250
A
V
R
= 200V, T
C
= 150
o
C
-
-
1.0
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
45
ns
I
F
= 30A, dI
F
/dt = 100A/
s
-
-
50
ns
t
a
I
F
= 30A, dI
F
/dt = 100A/
s
-
20
-
ns
t
b
I
F
= 30A, dI
F
/dt = 100A/
s
-
15
-
ns
R
JC
-
-
1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
s (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
s (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
0
V
F
, FORWARD VOLTAGE (V)
0.3
0.6
0.9
1.2
1.5
I
F,
FOR
W
ARD CURRENT (A)
175
o
C
100
o
C
25
o
C
400
100
10
1
0.1
0.01
0.001
0
50
100
150
200
I
R,
REVERSE V
O
L
T
A
GE
(
A)
V
R
, REVERSE VOLTAGE (V)
175
o
C
100
o
C
25
o
C
RURP3020
2002 Fairchild Semiconductor Corporation
RURP3020 Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
40
30
20
10
0
1
10
30
t,
TIME
(ns)
I
F
, FORWARD CURRENT (A)
trr
ta
tb
40
30
20
10
0
130
140
150
160
170
180
DC
SQUARE
WAVE
T
C
,
CASE TEMPERATURE (
o
C)
I
F(A
V
)
,
A
VERA
GE FOR
W
ARD CURRENT (A)
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RURP3020
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
Rev. H4
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
SMART STARTTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
STAR*POWER is used under license
VCXTM
PDF 
ZIP