S1A-S1M
S1A-S1M, Rev. A
S1A - S1M
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
T
A
= 25C unless otherwise noted
1998 Fairchild Semiconductor Corporation
Features
Low profile package.
Glass passivated junction.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
I
O
Average Rectified Current
@ T
A
= 100
C
1.0
A
i
f(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
40
A
P
D
Total Device Dissipation
Derate above 25
C
1.4
11
W
mW/
C
R
JA
Thermal Resistance, Junction to Ambient **
85
C/W
T
stg
Storage Temperature Range
-55 to +150
C
T
J
Operating Junction Temperature
-55 to +150
C
Parameter
Device
Units
1A
1B
1D
1G
1J
1K
1M
Peak Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated V
R
)
50
100
200
400
600
800
1000
V
Maximum Reverse Current
@ rated V
R
T
A
= 25
C
T
A
= 125
C
1.0
50
A
A
Maximum Forward Voltage @ 1.0 A
1.1
V
Maximum Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
1.8
S
Typical Junction Capacitance
V
R
= 4.0 V, f = 1.0 MHz
12
pF
2
1
0.208 (5.283)
0.188 (4.775)
0.181 (4.597)
0.157 (3.988)
0.096 (2.438)
0.078 (1.981)
0.062 (1.575)
0.055 (1.397)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
0.060 (1.524)
0.030 (0.762)
0.114 (2.896)
0.098 (2.489)
Discrete POWER & Signal
Technologies
S1A-S1M
S1A-S1M, Rev. A
General Purpose Rectifiers
(continued)
Typical Characteristics
Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
1
2
LEAD TEMPERATURE ( C)
FO
RW
AR
D CU
RRE
NT
(
A
)
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.315x0.315"
(8.0x8.0mm)
COPPER PAD AREAS
Junction Capacitance
0.01
0.1
1
10
100
1
5
10
50
100
REVERSE VOLTAGE (V)
C
A
PA
C
I
TA
N
C
E (
p
F
)
T = 25 C
J
f = 1.0 MHz
Vsig = 50mV p-p
Thermal Impedance
0.01
0.1
1
10
100
1
5
10
50
100
PULSE DURATION (SEC.)
TH
E
R
M
A
L
I
M
P
E
DA
N
C
E (
C
/
W
)
Units Mounted On
20"x 20"(5.4mm )+0.5mil
inches(0.013mm)
Thick Copper Land Areas
2
Non-Repetitive Surge Current
1
2
5
10
20
50
100
0
5
10
15
20
25
30
NUMBER OF CYCLES AT 60Hz
F
O
R
W
A
R
D
S
URG
E
CU
RR
E
N
T
(
A
)
8.3ms Single Half Sine-Wave
JEDEC Method
Forward Characteristics
0.6
0.8
1
1.2
1.4
1.6
1.8
0.01
0.1
1
10
100
FORWARD VOLTAGE (V)
F
O
R
W
AR
D CU
RR
E
N
T
(
A
)
Reverse Characteristics
0
20
40
60
80
100
120
140
0.001
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
RE
V
E
RS
E
CU
R
R
E
N
T
(
A)
T = 125 C
J
T = 75 C
J
T = 25 C
J
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
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