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2002 Fairchild Semiconductor Corporation
SGH5N120RUFD Rev. B2
IGBT
S
G
H5N120RUF
D
SGH5N120RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
Short circuit rated 10
s @ T
C
= 100
C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 5A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 55ns (typ.)
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGH5N120RUFD
Units
V
CES
Collector-Emitter Voltage
1200
V
V
GES
Gate-Emitter Voltage
25
V
I
C
Collector Current
@ T
C
= 25
C
8
A
Collector Current
@ T
C
= 100
C
5
A
I
CM (1)
Pulsed Collector Current
15
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
5
A
I
FM
Diode Maximum Forward Current
30
A
T
SC
Short Circuit Withstand Time
@ T
C
= 100
C
10
s
P
D
Maximum Power Dissipation
@ T
C
= 25
C
74
W
Maximum Power Dissipation
@ T
C
= 100
C
30
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
1.68
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
2.4
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G C E
TO-3P
G
C
E
G
C
E
SGH5N120RUFD Rev. B2
S
G
H5N120RUF
D
2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1mA
1200
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
1
mA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 5mA, V
CE
= V
GE
3.5
5.5
7.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 5A
,
V
GE
= 15V
--
2.3
3.0
V
I
C
= 8A
,
V
GE
= 15V
--
2.8
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
520
--
pF
C
oes
Output Capacitance
--
45
--
pF
C
res
Reverse Transfer Capacitance
--
16
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 5A,
R
G
= 30
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
20
--
ns
t
r
Rise Time
--
60
--
ns
t
d(off)
Turn-Off Delay Time
--
50
90
ns
t
f
Fall Time
--
150
300
ns
E
on
Turn-On Switching Loss
--
0.35
--
mJ
E
off
Turn-Off Switching Loss
--
0.33
--
mJ
E
ts
Total
Switching
Loss
--
0.68
0.95
mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 5A,
R
G
= 30
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
20
--
ns
t
r
Rise Time
--
70
--
ns
t
d(off)
Turn-Off Delay Time
--
70
130
ns
t
f
Fall Time
--
200
400
ns
E
on
Turn-On Switching Loss
--
0.38
--
mJ
E
off
Turn-Off Switching Loss
--
0.50
--
mJ
E
ts
Total
Switching
Loss
--
0.88
1.28
mJ
T
sc
Short Circuit Withstand Time
V
CC
= 600 V, V
GE
= 15V
@
T
C
= 100
C
10
--
--
s
Q
g
Total Gate Charge
V
CE
= 600 V, I
C
= 5A,
V
GE
= 15V
--
28
42
nC
Q
ge
Gate-Emitter Charge
--
3
5
nC
Q
gc
Gate-Collector Charge
--
13
18
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 5A
T
C
= 25
C
--
2.9
3.5
V
T
C
= 100
C
--
2.7
--
t
rr
Diode Reverse Recovery Time
I
F
= 5A
dI/dt = 200 A/
s
T
C
= 25
C
--
55
100
ns
T
C
= 100
C
--
70
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
C
--
5.0
7.0
A
T
C
= 100
C
--
6.5
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
140
350
nC
T
C
= 100
C
--
230
--
SGH5N120RUFD Rev. B2
S
G
H5N120RUF
D
2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
4
8
12
16
20
0
4
8
12
16
20
10A
5A
I
C
= 3A
Common Emitter
T
C
= 25
Col
l
ect
o
r -
Emit
ter V
o
lta
ge,
V
CE
[V]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
10A
5A
I
C
= 3A
Co
l
l
ec
t
o
r
-
Emi
t
t
e
r
Vol
t
a
ge,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
25
50
75
100
125
150
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
Common Emitter
V
GE
= 15V
I
C
= 5A
8A
C
o
lle
c
t
o
r
- E
m
itte
r
V
o
lta
g
e
,
V
CE
[V
]
Case Temperature, T
C
[
]
0
2
4
6
8
10
0
5
10
15
20
25
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
o
l
l
ector Current, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
10
20
30
40
20V
17V
15V
12V
V
GE
= 10V
Common Emitter
T
C
= 25
Co
llecto
r Curr
ent,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0.1
1
10
100
1000
0
4
8
12
V
CC
= 600V
Load Current : peak of square wave
Duty cycle : 50%
T
C
= 100
Power Dissipation = 15W
Load Current [A
]
Frequency [KHz]
SGH5N120RUFD Rev. B2
S
G
H5N120RUF
D
2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
10
100
10
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
=5A
T
C
= 25
T
C
= 125
tr
td(on)
S
witching Time [ns]
Gate Resistance, R
G
[
]
10
100
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
15V
T
C
= 25
T
C
= 125
tf
td(off)
Switching
Time [ns
]
Gate Resistance, R
G
[
]
2
4
6
8
10
100
1000
Common Emitter
V
GE
=
15V, R
G
= 30
T
C
= 25
T
C
= 125
tf
td(off)
Switching
Time [ns]
Collector Current, I
C
[A]
1
10
0
200
400
600
800
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Cies
Coes
Cres
Cap
a
cita
nce [p
F]
Collector - Emitter Voltage, V
CE
[V]
10
100
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 5A
T
C
= 25
T
C
= 125
Eoff
Eon
Eoff
Switching Loss [
J]
Gate Resistance, R
G
[
]
2
4
6
8
10
10
100
Common Emitter
V
GE
=
15V, R
G
= 30
T
C
= 25
T
C
= 125
tr
td(on)
Switchi
ng Time [ns]
Collector Current, I
C
[A]
SGH5N120RUFD Rev. B2
S
G
H5N120RUF
D
2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
herm
a
l Re
sponse
[Zth
jc]
Rectangular Pulse Duration [sec]
1
10
100
1000
1
10
Safe Operating Area
V
GE
= 20V, T
C
= 100
C
o
ll
ector Current, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
2
4
6
8
10
100
1000
Common Emitter
V
GE
=
15V, R
G
= 30
T
C
= 25
T
C
= 125
Eoff
Eon
Eoff
Eon
Switching Lo
ss [
J]
Collector Current, I
C
[A]
0
10
20
30
0
2
4
6
8
10
12
14
16
Common Emitter
R
L
= 120
T
C
= 25
600V
400V
V
CC
= 200V
Ga
te
-
Emi
t
t
e
r V
o
l
t
a
ge V
GE
[V
]
Gate Charge, Q
g
[nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linearly with increase
in temperature
50
s
100
s
1ms
DC Operation
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
C
o
llec
t
or C
u
rren
t, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
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