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2001 Fairchild Semiconductor Corporation
April 2001
SGS13N60UFD Rev. A
IGBT
S
G
S13N60UFD
SGS13N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 6.5A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 37ns (typ.)
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGS13N60UFD
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
13
A
Collector Current
@ T
C
= 100
C
6.5
A
I
CM (1)
Pulsed Collector Current
52
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
8
A
I
FM
Diode Maximum Forward Current
56
A
P
D
Maximum Power Dissipation
@ T
C
= 25
C
45
W
Maximum Power Dissipation
@ T
C
= 100
C
18
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8" from Case for 5 Seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
2.7
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
1.7
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C
/
W
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G
C
E
TO-220F
G C E
2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
S
G
S13N60UFD
Electrical Characteristics of IGBT
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
B
VCES
/
T
J
Temperature Coeff. of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
C
I
CES
Collector Cut-off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
A
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 6.5mA, V
CE
= V
GE
3.5
4.5
6.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 6.5A
,
V
GE
= 15V
--
2.1
2.6
V
I
C
= 13A
,
V
GE
= 15V
--
2.6
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
375
--
pF
C
oes
Output Capacitance
--
63
--
pF
C
res
Reverse Transfer Capacitance
--
13
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
20
--
ns
t
r
Rise Time
--
27
--
ns
t
d(off)
Turn-Off Delay Time
--
70
130
ns
t
f
Fall Time
--
97
150
ns
E
on
Turn-On Switching Loss
--
85
--
J
E
off
Turn-Off Switching Loss
--
95
--
J
E
ts
Total
Switching
Loss
--
180
270
J
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 6.5A,
R
G
= 50
, V
GE
= 15V
,
Inductive Load, T
C
= 125
C
--
30
--
ns
t
r
Rise Time
--
32
--
ns
t
d(off)
Turn-Off Delay Time
--
85
200
ns
t
f
Fall Time
--
168
250
ns
E
on
Turn
-
On Switching Loss
--
180
--
J
E
off
Turn
-
Off Switching Loss
--
165
--
J
E
ts
Total
Switching
Loss
--
345
500
J
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 6.5A,
V
GE
= 15V
--
25
35
nC
Q
ge
Gate-Emitter Charge
--
7
12
nC
Q
gc
Gate-Collector Charge
--
8
14
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 8A
T
C
= 25
C
--
1.4
1.7
V
T
C
= 100
C
--
1.3
--
t
rr
Diode Reverse Recovery Time
I
F
= 8A,
di/dt = 200A/
s
T
C
= 25
C
--
37
55
ns
T
C
= 100
C
--
55
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
C
--
3.5
5.0
A
T
C
= 100
C
--
4.5
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
65
138
nC
T
C
= 100
C
--
124
--
2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
S
G
S13N60UFD
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
13A
6.5A
I
C
= 3A
C
o
ll
ec
tor
- E
m
itte
r
V
o
lta
g
e
,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
13A
6.5A
I
C
= 3A
Col
l
ec
to
r - Em
i
t
t
e
r
V
o
l
t
ag
e,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
30
60
90
120
150
0
1
2
3
4
13A
6.5A
I
C
= 3A
Common Emitter
V
GE
= 15V
Col
l
e
ct
or
-
Em
i
t
t
e
r Vol
t
age,
V
CE
[V
]
Case Temperature, T
C
[
]
0.5
1
10
0
5
10
15
20
25
30
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
C
o
ll
ec
tor
C
u
rr
ent, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0
2
4
6
8
0
10
20
30
40
50
60
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
Col
l
ec
t
o
r
Cu
r
r
en
t
,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
10
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 10W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
o
a
d
C
u
rre
n
t
[A
]
2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
S
G
S13N60UFD
1
10
100
400
10
100
600
Eon
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 6.5A
T
C
= 25
T
C
= 125
Swi
t
c
h
i
n
g
Lo
ss
[uJ]
Gate Resistance, R
G
[
]
1
10
100
300
50
100
600
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 6.5A
T
C
= 25
T
C
= 125
S
w
it
c
h
in
g
T
i
m
e
[
n
s
]
Gate Resistance, R
G
[
]
1
10
100
400
10
100
300
Common Emitter
V
CC
= 300V, V
GE
=
15V
I
C
= 6.5A
T
C
= 25
T
C
= 125
Ton
Tr
S
w
it
c
h
in
g
T
i
m
e
[
n
s
]
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
0
2
4
6
8
10
12
14
50
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 50
T
C
= 25
T
C
= 125
S
w
itc
h
i
n
g
T
i
m
e
[ns]
Collector Current, I
C
[A]
0
2
4
6
8
10
12
14
10
100
200
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 50
T
C
= 25
T
C
= 125
Sw
i
t
ch
i
n
g T
i
m
e
[
n
s
]
Collector Current, I
C
[A]
1
10
30
0
100
200
300
400
500
600
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Cap
a
ci
t
a
n
c
e [
p
F]
Collector - Emitter Voltage, V
CE
[V]
2001 Fairchild Semiconductor Corporation
SGS13N60UFD Rev. A
S
G
S13N60UFD
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
h
erm
a
l
Resp
on
se, Zt
h
j
c [
/W
]
Rectangular Pulse Duration [sec]
1
10
100
1000
0.1
1
10
100
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
C
o
lle
c
t
o
r
C
u
rre
n
t
,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
Fig 17. Transient Thermal Impedance of IGBT
0
2
4
6
8
10
12
14
5
10
100
500
Eoff
Eon
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
15V
R
G
= 50
T
C
= 25
T
C
= 125
Sw
i
t
ch
i
n
g L
o
ss
[
u
J]
Collector Current, I
C
[A]
0
5
10
15
20
25
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 46
Tc = 25
G
a
te
- E
m
itte
r V
o
lt
ag
e,
V
GE
[
V
]
Gate Charge, Q
g
[ nC ]
0.3
1
10
100
1000
0.05
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
Curves must be derated
linerarly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
o
ll
ec
to
r C
u
r
r
en
t,
I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
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