January 2001
2001 Fairchild Semiconductor International
Si4542DY Rev A
Si4542DY
30V Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
Features
Q1: N-Channel
6
A,
30
V
R
DS(on)
= 28 m
@ V
GS
= 10V
R
DS(on)
= 35 m
@ V
GS
= 4.5V
Q2: P-Channel
6 A, 30 V
R
DS(on)
= 32 m
@ V
GS
= 10V
R
DS(on)
= 45 m
@ V
GS
= 4.5V
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
Drain-Source Voltage
30
30
V
V
GSS
Gate-Source Voltage
20
20
V
I
D
Drain Current - Continuous
(Note 1a)
6
6
A
- Pulsed
20
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +175
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
4542
Si4542DY
13"
12mm
2500 units
Si4542
DY
Si4542DY Rev A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
V
GS
= 0 V, I
D
= 250 A
Q1
Q2
30
30
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
23
21
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V
Q1
Q2
1
1
A
I
GSS
Gate-Body Leakage
V
GS
= +20 V, V
DS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
Q1
Q2
1
1
1.5
1.7
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
4
4
mV/
C
Q1
19
32
25
28
48
35
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 5 A
Q2
21
29
30
32
51
45
m
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 10 V, V
DS
= 5 V
Q1
Q2
20
20
A
g
FS
Forward Transconductance V
DS
= 15 V, I
D
= 6 A
V
DS
= 10 V, I
D
= 6 A
Q1
Q2
18
16
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
830
1540
pF
C
oss
Output Capacitance
Q1
Q2
185
400
pF
C
rss
Reverse Transfer
Capacitance
Q1
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Q1
Q2
80
170
pF
Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
6
13
12
24
ns
t
r
Turn-On Rise Time
Q1
Q2
10
22
18
35
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
18
47
29
75
ns
t
f
Turn-Off Fall Time
Q1
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Q1
Q2
5
18
12
30
ns
Q
g
Total Gate Charge
Q1
Q2
9
15
13
20
nC
Q
gs
Gate-Source Charge
Q1
Q2
2.8
4
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 15 V, I
D
= 7.5 A, V
GS
= 5 V
Q2
V
DS
= 10 V, I
D
= 6 A, V
GS
= 5V
Q1
Q2
3.1
5
nC
Si4542
DY
Si4542DY Rev A
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
1.3
1.3
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
Q1
Q2
0.7
0.7
1.2
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78C/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125C/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Si4542
DY
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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