www.docs.chipfind.ru
January 2001
Si4822DY
Single N-Channel, Logic Level, PowerTrench
MOSFET
GeneralDescription Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol Parameter Si4822DY Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current - Continuous
(Note 1a)
12.5
A
- Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Si4822DY Rev.A
12.5 A, 30 V. R
DS(ON)
= 0.0095
@ V
GS
= 10 V
R
DS(ON)
= 0.013
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
1
6
7
8
2
4
3
5
2001 Fairchild Semiconductor International
S
D
S
S
SO-8
D
D
D
G
pin
1
48
22
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
33
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
= 55C
10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
-4.5
mV /
o
C
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.6
3
V
T
J
=125C
0.8
1.3
2.4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 12.5 A
0.008
0.0095
T
J
=125C
0.012
0.016
V
GS
= 4.5 V, I
D
= 10.5 A
0.0105
0.013
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
25
A
g
FS
Forward Transconductance
V
DS
= 15 V, I
D
= 12.5 A
35
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2180
pF
C
oss
Output Capacitance
500
pF
C
rss
Reverse Transfer Capacitance
255
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DS
= 10 V, I
D
= 1 A
13
24
ns
t
r
Turn - On Rise Time
V
GS
= 10 V , R
GEN
=
6
14
26
ns
t
D(off)
Turn - Off Delay Time
43
70
ns
t
f
Turn - Off Fall Time
15
27
ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 12.5 A,
23
33
nC
Q
gs
Gate-Source Charge
V
GS
= 5 V
7
nC
Q
gd
Gate-Drain Charge
11
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
2.1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.72
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is
guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
Si4822DY Rev.A
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
Si4822DY Rev.A
0
0.5
1
1.5
2
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
DS
D
2.5V
3.5V
3.0V
4.0V
V = 10V
GS
6.0V
4.5V
0
10
20
30
40
50
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.0V
GS
D
R , NORMALIZED
DS(ON)
10V
4.5 V
7.0V
5.5V
4.0 V
3.5 V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = 10V
GS
I = 12.5A
D
Figure 3. On-Resistance Variation with
Temperature.
1
2
3
4
0
10
20
30
40
50
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V =5.0V
DS
GS
D
T = -55C
J
125C
25C
Figure 5 . Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
40
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25C
-55C
V = 0V
GS
SD
S
T = 125C
J
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.01
0.02
0.03
0.04
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
125C
25C
I = 6.3A
D
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
Si4822DY Rev.A
0.05
0.1
0.5
1
2
5
10
30 50
0.01
0.1
1
3
10
30
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = 125C/W
T = 25C
JA
GS
A
100us
0.001
0.01
0.1
1
10
100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =125C/W
T = 25C
JA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
30
100
200
400
1000
2000
4000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R (t) = r(t) * R
R = 125C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
10
20
30
40
50
60
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 12.5A
D
V = 5V
DS
15V
10V
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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