50
50
20
2.0
1.6
8.0
2.0
1.3
- 55 to +150
300
8 SOP
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
4
3
1
2
5
6
8
7
Top View
N-Channel MOSFET
!
Extremely Lower R
DS(ON)
!
Improved Inductive Ruggedness
!
Fast Switching Times
!
Rugged Polysilicon Gate Cell Structure
!
Low Input Capacitance
!
Extended Safe Operating Area
!
Improved High Temperature Reliability
!
Surface Mounding Package : 8SOP
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage(1)
Drain-Gate Voltage(R
GS
=1.0M
)(1)
Gate-to-Source Voltage
Continuous Drain Current T
A
=25
Continuous Drain Current T
A
=100
Drain Current-Pulsed (2)
Total Power Dissipation T
A
=25
T
A
=70
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/16" from case for 5 seconds
Characteristic
Value
Units
Symbol
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
A
V
A
V
DSS
V
V
DGR
V
V
W
Notes ;
(1) T
J
= 25
to 150
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature
Rev. A
SSD2007A
Dual N-CHANNEL POWER MOSFET
D
1
,D
2
G
1
,G
2
S
1
,S
2
D
1
,D
2
Electrical Characteristics
(T
A
=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance(2)
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
g
fs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V
A
A
A
S
ns
nC
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250
A
V
DS
= V
GS
,I
D
=250
A
V
GS
=20V
V
GS
=-20V
V
DS
=50V
V
DS
=40V,T
J
=55
V
GS
=10V,I
D
=1.5A
V
GS
=5.0V,I
D
=0.6A
V
DS
15V,I
D
=2.0A
V
DD
=30V,I
D
=0.6A,
Z
0
=6.0
,
V
DS
=25V,V
GS
=10V,
I
D
=1.3A
Drain-to-Source Leakage Current
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
Diode Forward Voltage(2)
Reverse Recovery Time
I
S
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
Modified MOSFET Symbol
Showing the Integral Reverse
P-N Junction Rectifier
I
DON
On-State Drain-Source Current(2)
A
V
GS
=10V,V
DS
=5V
V
SD
t
rr
T
J
=25
,I
S
=1.25A,V
GS
=0V
T
J
=25
,I
F
=2.5A,di
F
/dt=100A/
s
600
2.0
--
--
--
--
8.0
--
--
--
--
--
--
--
--
4.0
1.0
-1.0
2
25
--
0.3
0.5
--
40
70
100
70
15
--
--
2.5
--
--
--
--
--
1.0
2.0
--
--
--
--
--
1.8
1.2
100
Thermal Resistance
Junction-to-Ambient
R
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
Notes ;
(1) T
J
= 25
to 150
(2) Pulse Test : Pulse Width
300
s, Duty Cycle
2%
--
62.5
D
S
G
Dual N-CHANNEL
POWER MOSFET
SSD2007A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Nomalized On-Resistance vs. Temperature
Fig 5. Breakdown Voltage vs. Temperature
Fig 3. On-Resistance vs. Drain Current
Fig 4. Capacitance vs. Drain-Source Voltage
0
2
4
6
8
10
0
2
4
6
8
10
Vgs=3V
Vgs=4V
Vgs=5V
Vgs=10V
I
D
, Dr
ai
n Cu
rr
en
t [A
]
V
DS
, Drain-Source Voltage [V]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
25
o
C
150
o
C
- 55
o
C
I
D
,
Drai
n Cur
rent
[A
]
V
GS
, Gate-Source Voltage [V]
5
10
15
20
25
0
80
160
240
320
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Cap
acit
ance
[pF
]
V
DS
, Drain-Source Voltage [V]
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 5 V
V
GS
= 10 V
R
DS
(o
n)
, [
]
Dr
ai
n-
Sou
rc
e On-
Re
si
sta
nc
e
I
D
, Drain Current [A]
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
I
D
= 250
A
BV
DS
S
, (N
or
ma
li
ze
d)
Dr
ai
n-
So
ur
ce
B
r
e
akd
ow
n
Vo
lt
ag
e
T
J
, Junction Temperature [
o
C]
-50
0
50
100
150
0.6
0.8
1.0
1.2
1.4
V
GS
= 10 V
I
D
= 1.5 A
R
DS
(o
n)
,
(Nor
maliz
ed)
Dra
in-S
ource
On-
Resi
stanc
e
T
J
, Junction Temperature [
o
C]
Dual N-CHANNEL
POWER MOSFET
SSD2007A
Fig 10. Threshold Voltage
Fig 9. Gate Charge vs. Gate-Source Voltage
Fig 8. Source-Drain Diode Forward Voltage
P
DM
t
1
t
2
Fig 7. Nomalized Effective Transient Thermal Impedance, Junction-to-Amdient
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
0.01
0.1
1
Single Pulse
0.05
Duty Cycle=0.5
0.2
0.1
0.02
@ Notes :
1. R
J A
(t)=62.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
A
=P
D M
*Z
J A
(t)
4. Surface Mounted
Thermal Impedance
Square Wave Pulse Duration [sec]
0
2
4
6
8
10
0
5
10
V
DD
= 25 V
I
D
= 1.3A
V
GS
, Gate
-Sou
rce Volt
age
[V]
Q
G
, Total Gate Charge [nC]
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10
0
10
1
10
2
T
J
=150
o
C
T
J
=25
o
C
I
DR
,
Re
ver
se
Dr
ain
Cu
rre
nt
[
A
]
V
SD
, Source-Drain Voltage [V]
-50
0
50
100
150
0.0
0.5
1.0
1.5
2.0
I
D
= 250
A
V
GS
(t
h)
,
(N
orm
al
ize
d)
T
J
, Junction Temperature [
o
C]
SSD2007A
Dual N-CHANNEL
POWER MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
MICROWIRE
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OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I
2
C
ISOPLANAR
LittleFET
MicroFET
MicroPak
Rev. H5
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E
2
CMOS
TM
EnSigna
TM
FACT
FACT Quiet Series
SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
STAR*POWER is used under license
UHC
UltraFET
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