ST5771-1
Discrete POWER & Signal
Technologies
PNP Switching Transistor
ST5771-1
This device is designed for high speed saturated switching
applications at currents to 100mA. Sourced from Process 65.
See PN4258 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
15
V
V
CBO
Collector-Base Voltage
15
V
V
EBO
Emitter-Base Voltage
4.5
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
ST5771-1
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
ST5771-1
PNP Switching Transistor
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 3.0 mA, I
B
= 0
15
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
15
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100
A, I
C
= 0
4.5
V
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 100
A
15
V
I
CBO
Collector Cutoff Current
V
CB
= 8.0 V, I
E
= 0
10
nA
I
CES
Collector Cutoff Current
V
CE
= 8.0 V, I
E
= 0
V
CE
= 8.0 V, I
E
= 0, T
A
= 125
0
C
10
5.0
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.5 V, I
C
= 0
1.0
A
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, f = 1.0 MHz
3.0
pF
C
eb
Emitter-Base Capacitance
V
EB
= 0.5 V, f = 1.0 MHz
3.5
pF
h
fe
Small-Signal Current Gain
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
7.0
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
t
s
Storage Time
V
CC
= 3.0 V
I
C
= I
B1
= I
B2
= 1.0 mA
20
ns
t
on
Turn-on Time
V
CC
= 1.5 V, I
C
= 10 mA,
15
ns
t
d
Delay Time
I
B1
= 1.0 mA
10
ns
t
r
Rise Time
15
ns
t
off
Turn-off Time
V
CC
= 1.5 V, I
C
= 10 mA
20
ns
t
s
Storage Time
I
B1
= I
B2
= 1.0 mA
20
ns
t
f
Fall Time
10
ns
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 0.3 V
I
C
= 10 mA, V
CE
= 0.3 V,
T
A
= - 55
C
I
C
= 1.0 mA, V
CE
= 0.5 V
I
C
= 50 mA, V
CE
= 1.0 V
30
15
30
20
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.15
0.18
0.6
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.8
0.8
0.95
1.5
V
V
V
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