2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
TIS75
TO-92
Absolute Maximum Ratings *
T
a
=25
C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
C unless otherwise noted
* Pulse Test: Pulse Width
300
s, Duty Cycle
3.0%
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
30
V
V
GS
Gate-Source Voltage
-30
V
I
GF
Forward Gate Current
10
mA
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 ~ +150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= 1.0
A, V
DS
= 0
-30
V
I
GSS
Gate Reverse Current
V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
a
= 100
C
-2.0
-5.0
nA
A
I
D
(off)
Drain Cutoff Leakage Current
V
DS
= 15V, V
GS
= -10V
V
DS
= 15V, V
GS
= -10V,
T
a
= 100
C
-2.0
-5.0
nA
A
V
GS
(off)
Gate-Source Cutoff Voltage
V
DS
= 20V, I
D
= 4.0nA
-0.8
-4.0
V
On Characteristics *
I
DSS
Zero-Gate Voltage Drain Current *
V
DS
= 15V, V
GS
= 0
8
80
mA
r
DS
(on)
Drain-Source On Resistance
V
DS
0.1V, V
GS
= 0
60
Small Signal Characteristics
C
iss
Input Capacitance
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
18
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
8.0
pF
Switching Characteristics
t
r
Rise Time
V
GS
(off) = -4.0V, V
GS
(on) = 0,
I
D
= 5.0mA, V
DS
= 10V
10
ns
t
on
Turn-On Time
10
ns
t
off
Turn-Off Time
100
ns
TIS75
N-Channel General Purpose Amplifier
This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
Sourced from process 54.
1. Gate 2. Source 3. Drain
1
2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
TIS75
Thermal Characteristics
T
a
=25
C unless otherwise noted
Symbol
Parameter
Max.
Units
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
2004 Fairchild Semiconductor Corporation
Rev. I11
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