TIS97
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
TIS97
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
TIS97
P
D
Total Device Dissipation
Derate above 25
C
625
5.0
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
83.3
C/W
R
JA
Thermal Resistance, Junction to Ambient
200
C/W
E
B
C
TO-92
1997 Fairchild Semiconductor Corporation
TIS97
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
40
V
I
CBO
Collector Cutoff Current
V
CB
= 40 V, I
E
= 0
V
CB
= 60 V, I
E
= 0
10
10
nA
A
I
EBO
Emitter Cutoff Current
V
EB
= 6.0 V, I
C
= 0
20
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 5.0 V, I
C
= 100
A
250
700
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 5.0 V, I
C
= 100
A
0.45
0.65
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 5.0 V, f = 1.0 MHz
1.0
4.0
pF
C
eb
Emitter-Base Capacitance
V
EB
= 0.5 V, f = 1.0 MHz
16
pF
h
fe
Small-Signal Current Gain
I
C
= 100
A, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
250
2.0
800
NF
Noise Figure
V
CE
= 5.0 V, I
C
= 30
A,
R
g
= 10 k
, f = 1.0 kHz,
B
W
= 100 Hz
V
CE
= 5.0 V, I
C
= 100
A,
R
g
= 10 k
, B
W
= 15.7 kHz
2.0
3.0
dB
dB
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
PDF 
ZIP