TN3725A / MMPQ3725
TN3725A
NPN Switching Transistor
This device is designed for high speed core driver applications
up to collector currents of 1.0 A. Sourced from Process 25.
Absolute Maximum Ratings
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
MMPQ3725
Symbol
Characteristic
Max
Units
TN3725A
MMPQ3725
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
125
125
240
C/W
C/W
C/W
TO-226
C
B
E
C
C
C
C
C
C
C
C
SOIC-16
E
B
E
B
E
B
E
B
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN3725A / MMPQ3725
Electrical Characteristics
TA= 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
C
= 10
A, V
BE
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
CE
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 100
C
1.7
120
A
A
I
CES
Collector Cutoff Current
V
CE
= 80 V, V
EB
= 0
10
A
ON CHARACTERISTICS*
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
10
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 1.0 MHz
55
pF
SWITCHING CHARACTERISTICS
(except MMPQ3725)
t
on
Turn-on Time
V
CC
= 30 V, V
BE(
off
)
= 3.8 V,
35
ns
t
d
Delay Time
I
C
= 500 mA, I
B1
= 50 mA
10
ns
t
r
Rise Time
30
ns
t
off
Turn-off Time
V
CC
= 30 V, I
C
= 500 mA
60
ns
t
s
Storage Time
I
B1
= I
B2
= 50 mA
50
ns
t
f
Fall Time
30
ns
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
=100mA,V
CE
=1.0V,T
A
= -55
C
I
C
= 300 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
=500mA,V
CE
=1.0V,T
A
= -55
C
I
C
= 800 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
30
60
30
40
35
20
20
25
150
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 1.0 A, I
B
= 100 mA
0.25
0.26
0.4
0.52
0.8
0.95
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 800 mA, I
B
= 80 mA
I
C
= 1.0 A, I
B
= 100 mA
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
NPN Switching Transistor
(continued)
TN3725A / MMPQ3725
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
P 2
0.001
0.01
0.1
1
0
50
100
150
200
I - COLLECTOR CURRENT (A)
h
-
TY
P
I
C
A
L
P
U
LS
E
D
C
U
R
R
E
N
T
G
A
I
N
FE
C
V = 1V
CE
125
C
- 40 C
25 C
Collector-Emitter Saturation
Voltage vs Collector Current
P 25
1
10
100
1000
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C
= 10
125
C
- 40 C
25 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
BE
S
A
T
125
C
- 40 C
25 C
C
= 10
Base-Emitter ON Voltage vs
Collector Current
P 2
0.1
1
10
25
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
B
E(O
N
)
C
V = 1V
CE
125
C
- 40 C
25 C
Collector-Cutoff Current
vs Ambient Temperature
P 25
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
L
L
E
CT
O
R
C
URRE
NT
(u
A)
A
V = 40V
CB
CBO
NPN Switching Transistor
(continued)
TN3725A / MMPQ3725
NPN Switching Transistor
(continued)
Input/Output Capacitance
vs. Reverse Bias
Contours of Constant
Bandwidth Product (f
T
)
AC Typical Characteristics
Switching Time vs.
Collector Current
Turn On / Turn Off Times
vs. Collector Current
Switching Times vs.
Ambient Temperature
Delay Time vs. Turn On Base Current
and Reverse Base-Emitter Voltage
TN3725A / MMPQ3725
AC Typical Characteristics
(continued)
Storage Time vs. Turn On
and Turn Off Base Currents
Rise Time vs. Collector and
Turn On Base Currents
Fall Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
Storage Time vs. Turn On
and Turn Off Base Currents
NPN Switching Transistor
(continued)
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