TN4033A
TN4033A
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
TN4033A
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
TO-226
C
B
E
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN4033A
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
I
C
= 10 mA, I
B
= 0
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150
C
50
50
nA
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
10
A
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
20
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
110
pF
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 10 V,
f = 100 MHz
1.0
4.0
SWITCHING CHARACTERISTICS
t
s
Storage Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
350
ns
t
on
Turn-On Time
I
C
= 500 mA, I
B1
= 50 mA
100
ns
t
f
Fall Time
I
C
= 500 mA, I
B1
= I
B2
= 50 mA
50
ns
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
h
FE
DC Current Gain
I
C
= 100
A, V
CE
= 5.0 V
I
C
=100mA, V
CE
=5.0V,T
A
= -55
C
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 500 mA, V
CE
= 5.0 V
I
C
= 1.0 A, V
CE
= 5.0 V
75
40
100
70
25
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.15
0.5
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
0.9
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 500 mA, V
CE
= 0.5 V
1.1
V
PNP General Purpose Amplifier
(continued)
TN4033A
Typical Characteristics
PNP General Purpose Amplifier
(continued)
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
50
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
IT
T
E
R
O
N
VO
L
T
A
G
E (
V
)
B
E(ON
)
C
V = 5V
CE
- 40 C
25 C
125 C
Typical Pulsed Current Gain
vs Collector Current
P 6
0.1
0.3
1
3
10
30
100
300
1000
0
50
100
150
200
250
300
I - COLLECTOR CURRENT (mA)
h
- T
Y
P
I
C
A
L
P
U
L
S
E
D
C
URRE
NT
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0.2
0.4
0.6
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
- 40 C
25 C
C
= 10
125 C
Base-Emitter Saturation
Voltage vs Collector Current
P 67
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE-
EM
I
T
T
E
R
VO
L
T
A
G
E
(
V
)
B
ESA
T
C
= 10
- 40 C
25 C
125 C
Collector-Cutoff Current
vs Ambient Temperature
P 6
25
50
75
100
125
150
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
CT
O
R
CU
RR
E
N
T
(n
A
)
A
V = 50V
CB
CBO
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
0.1
1
10
50
6
10
20
50
100
200
500
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(p
F
)
C obo
C
ibo
f = 1.0 MHz
TN4033A
Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
Switching Times vs
Collector Current
P 6
1
2
20
100
200
0
40
80
120
160
200
240
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
s
)
C
V = -1.0V
CE
V = -10V
CE
Turn On and Turn Off Times vs
Collector Current
P 6
10
100
500
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
s
)
I = I = I
V = - 30V 10
t off
t
B1
C
B2
CC
on
C
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- PO
W
E
R
D
I
S
S
I
P
A
T
I
O
N
(W
)
D
o
TO-226
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