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Электронный компонент: TN6705A

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TN6705A
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
TN6705A
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 1.2 A. Sourced from
Process 38. See TN6715A for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
45
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.5
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
TN6705a
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
50
C/W
TO-226
C
B
E
1997 Fairchild Semiconductor Corporation
TN6705A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
C
= 10 mA, I
B
= 0
45
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100 mA, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0 mA, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
0.1
A
I
EBO
Emitter Cutoff Current
V
EB
= 5.0 V, I
C
= 0
0.1
A
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 2.0 V, I
C
= 50 mA
V
CE
= 2.0 V, I
C
= 250 mA
V
CE
= 2.0 V, I
C
= 500 mA
40
40
25
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 100 mA
0.5
1.0
V
V
V
BE(
on
)
Base-Emitter On Voltage
V
CE
= 2.0 V, I
C
= 1.0 A
1.5
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance
V
CB
= 10 V, f = 1.0 MHz
30
pF
h
fe
Small-Signal Current Gain
I
C
= 50 mA, V
CE
= 5.0 V,
f = 20 MHz
2.5
20
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%