TN6725A
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
T
A = 25C unless otherwise noted
C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
1.2
Collector Current - Continuous
I
C
V
12
Emitter-Base Voltage
V
EBO
V
60
Collector-Base Voltage
V
CBO
V
50
Collector-Emitter Voltage
V
CES
Units
Value
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25C unless otherwise noted
C/W
125
Thermal Resistance, Junction to Ambient
R
JA
C/W
50
Thermal Resistance, Junction to Case
R
JC
W
mW/C
1
8
Total Device Dissipation
Derate above 25C
P
D
TN6725A
Units
Max
Characteristic
Symbol
TN6725A, Rev A
1997 Fairchild Semiconductor Corporation
TN6725A
Discrete Power & Signal
Technologies
C
B
E
TO-226
-
10
1
I
C
= 200 mA,V
CE
= 5 V, f=100MHz
Small Signal Current Gain
h
fe
pF
10
V
CB
= 10 V, I
E
= 0, f = 1MHz
Output Capacitance
C
cb
SMALL SIGNAL CHARACTERISTICS
V
2
I
C
= 1 A, V
CE
= 5.0 V
Base-Emitter On Voltage
V
BE(on)
V
2
I
C
= 1 A, I
B
= 2 mA
Base-Emitter Saturation Voltage
V
BE(sat)
V
1.0
1.5
I
C
= 200 mA, I
B
= 2 mA
I
C
= 1 A, I
B
= 2 mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
40,000
25,000
15,000
4000
I
C
= 200 mA, V
CE
= 5 V
I
C
= 500 mA, V
CE
= 5 V
I
C
= 1A, V
CE
= 5 V
DC Current Gain
h
FE
ON CHARACTERISTICS*
nA
100
V
EB
= 10 V
Emitter Cutoff Current
I
EBO
nA
100
V
CB
= 40 V
Collector Cutoff Current
I
CBO
V
12
I
E
= 10
A
Emitter-Base Breakdown Voltage
BV
EBO
V
60
I
C
= 100
A
Collector-Base Breakdown Voltage
BV
CBO
V
50
I
C
= 1 mA
Collector-Emitter Breakdown Voltage
BV
CES
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
NPN Darlington Transistor
(continued)
Electrical Characteristics
T
A = 25C unless otherwise noted
*Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
TN6725A, Rev A
1997 Fairchild Semiconductor Corporation
TN6725A
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