TN6729A / NZT6729
TN6729A
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NZT6729
Thermal Characteristics
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
80
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
1.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
TN6729A
*NZT6729
P
D
Total Device Dissipation
Derate above 25
C
1.0
8.0
1.0
8.0
W
mW/
C
R
JC
Thermal Resistance, Junction to Case
50
C/W
R
JA
Thermal Resistance, Junction to Ambient
125
125
C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
TN6729A / NZT6729
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS*
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mA, I
B
= 0
80
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100
A, I
E
= 0
80
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0 mA, I
C
= 0
5.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 60 V, I
E
= 0
0.1
A
I
EBO
Emitter-Cutoff Current
V
EB
= 5.0 V, I
C
= 0
10
A
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
80
50
20
250
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, I
B
= 25 mA
0.5
0.35
V
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 250 mA, V
CE
= 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
1.0%
Typical Characteristics
h
fe
Small-Signal Current Gain
I
C
= 200 mA, V
CE
= 5.0 V,
f = 20 MHz
2.5
25
C
cb
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
PNP General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
P 9
0.01
0.02
0.05
0.1
0.5
1
0
50
100
150
200
I - COLLECTOR CURRENT (mA)
h
-
T
YPIC
A
L
PU
L
SED
C
U
R
R
EN
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 1.0 V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
P 79
10
100
1000
0.01
0.1
1
2
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
E
M
I
TTE
R
V
O
L
T
A
G
E
(
V
)
C
C
ESA
T
25 C
- 40 C
125 C
= 10
TN6729A / NZT6729
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
O
N
VO
L
T
A
G
E
(
V
)
C
B
EON
V = 5V
CE
25 C
- 40 C
125 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
VO
L
T
A
G
E
(
V
)
C
B
ESA
T
= 10
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
P 9
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
C
O
L
L
E
CT
O
R
CU
RR
E
N
T
(
n
A
)
A
CBO
V = 60V
CB
Collector-Base Capacitance
vs Collector-Base Voltage
Pr79
0
4
8
12
16
20
24
28
0
10
20
30
40
V - COLLECTOR-BASE VOLTAGE (V)
C
-
C
O
L
L
E
C
T
O
R
-
B
A
S
E
CA
P
A
CI
T
A
NCE
(p
F
)
C B
OB
O
f = 1.0 MHz
Gain Bandwidth Product
vs Collector Current
P 9
1
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
f
- G
A
I
N
B
ANDW
I
D
T
H
P
R
O
DUC
T
(
M
H
z
)
C
T
V = 10V
CE
Safe Operating Area TO-226
Pr79
1
10
100
0.01
0.1
1
10
V - COLLECTOR-EMITTER VOLTAGE (V)
I
- CO
L
L
E
C
T
O
R
CU
RR
E
N
T
(A
)
CE
C
*PULSED
OPERATION
T = 25 C
A
LIMIT DETERMINED
BY BV
CEO
DC T
=
25
C
CO
LLE
CTO
R L
EAD
DC T
=
25
C
AM
BIEN
T
100
S*
10
S*
1.
0 m
s*
TN6729A / NZT6729
Typical Characteristics
(continued)
PNP General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
- P
O
W
E
R
D
I
SSI
P
A
T
I
O
N
(W
)
D
o
TO-226
SOT-223
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