Description
Features
n PLANAR PROCESS
n 500 mW POWER DISSIPATION
Mechanical Dimensions
n INDUSTRY STANDARD DO-35
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
1N4151
Data Sheet
500 mW EPITAXIAL
PLANAR DIODES
1N4151
Units
Volts
Volts
............................................. 215 ...............................................
............................................. 500 ...............................................
............................................. 500 ...............................................
......................................... -65 to 150 .........................................
............................................. 1.0 ...............................................
............................................. 50 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 2.0 ...............................................
mAmps
mAmps
mW
C
Volts
nAmps
MHz
pF
ns
Page 8-5
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating & Storage Temperature Range...T
J,
T
STRG
Maximum Forward Voltage...V
F
@ I
F
= 50 mA
Maximum DC Reverse Current...I
R
@ V
R
= 50v
Maximum Frequency...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...t
RR
IN4151
75
50
JEDEC
D0-35
P
VV
= 100nS
50 Ohms
5K Ohms
R
G
= 50 Ohms
.01 uF
I
F
Output
Trr
I
R
0.1 I
R
Device Under T
Device Under T
Device Under T
Device Under T
Device Under Test
est
est
est
est
Electrical Characteristics
.120
.200
1.00 Min.
.018
.022
.060
.090
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