Description
Features
n PLANAR PROCESS
n 500 mW POWER DISSIPATION
Mechanical Dimensions
n INDUSTRY STANDARD DO-35
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
1N4448
Data Sheet
500 mW EPITAXIAL
PLANAR DIODES
1N4448
Units
1N4448
100
75
Volts
Volts
Page 8-6
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ V
R
= 75v
Maximum Frequency...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...t
RR
............................................. 215 ...............................................
............................................. 500 ...............................................
............................................. 500 ...............................................
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
............................................. 1.0 ...............................................
............................................. 5.0 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 4.0 ...............................................
mAmps
mAmps
mW
C
C
Volts
Amps
MHz
pF
ns
JEDEC
D0-35
50 Ohms
5K Ohms
R
G
= 50 Ohms
.01 uF
I
F
Output
Trr
I
R
0.1 I
R
Device Under T
Device Under T
Device Under T
Device Under T
Device Under Test
est
est
est
est
Electrical Characteristics
.120
.200
1.00 Min.
.018
.022
.060
.090
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