Description
Features
n PLANAR PROCESS
n 250 mW POWER DISSIPATION
Mechanical Dimensions
n INDUSTRY STANDARD D0-35
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
1N914
Data Sheet
250 mW EPITAXIAL
PLANAR DIODES
1N914
Units
Volts
Volts
............................................. 100 ...............................................
............................................. 300 ...............................................
............................................. 250 ...............................................
......................................... -25 to 85 ..........................................
......................................... -55 to 125 ..........................................
............................................. 1.2 ...............................................
............................................. 0.1 ...............................................
............................................. 100 ...............................................
............................................. 3.5 ...............................................
............................................. 4.0 ...............................................
mAmps
mAmps
mW
C
C
Volts
Amps
MHz
pF
ns
Page 8-2
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ V
R
= 70v
Maximum Frequency ...f
Maximum Diode Capacitance, V
R
= 6V, f = 1MHz...C
D
Maximum Reverse Recovery Time...t
RR
1N914
80
80
JEDEC
D0-35
Device Under T
Device Under T
Device Under T
Device Under T
Device Under Test
est
est
est
est
P
VV
= 100nS
50 Ohms
5K Ohms
R
G
= 50 Ohms
.01 uF
I
F
Output
Trr
I
R
0.1 I
R
Electrical Characteristics
.120
.200
1.00 Min.
.018
.022
.060
.090
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