Description
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25
O
C.
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
FMBBAS16
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
FMBBAS16
Units
FMBBAS16
8 5
7 5
Volts
Volts
Page 10-24
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Forward Voltage...V
F
@ I
F
= 150 mA
DC Reverse Current...I
R
@ V
R
= 75V
Power Dissipation...P
D
Frequency...F
Typical Junction Capacitance...C
J
Reverse Recovery Time...t
RR
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
............................................. 215 ...............................................
............................................. 4 ...............................................
............................................. 1.25 ...............................................
............................................. 5.0 ...............................................
............................................. 200 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 4.0 ...............................................
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
mAmps
Amps
Volts
Amps
mW
MHz
pF
nS
C
C
.110
.060
.037
.037
.115
.016
.043
.004
.016
1
2
3
Pin 2
Pin 3
Pin 1 NC
P
VV
= 100nS
Device Under T
Device Under T
Device Under T
Device Under T
Device Under Test
est
est
est
est
50 Ohms
5K Ohms
R
G
= 50 Ohms
.01 uF
I
F
Output
Trr
I
R
0.1 I
R
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