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Электронный компонент: FMA411

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PRELIMINARY
FMA411
L
OW
-N
OISE
X-BAND
MMIC
Phone: +1 408 850-5790
www.filcs.com
Revised: 7/19/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE
8.5 14.0 GHz Operating Bandwidth
2.6 dB Noise Figure
18 dB Small-Signal Gain
17.5 dm Output Power
+6V Single Bias Supply
Adjustable Operating Current
DC De-coupled Input and Output Ports
DESCRIPTION AND APPLICATIONS
The FMA411 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use
over the 8.5 to 14.0 GHz bandwidth. The amplifier requires a single +6V supply and one off-chip
component for supply de-coupling; the supply voltage can be varied from +3V to +6V if needed.
Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated
thru-vias to the bottom of the die, no additional ground is required. Operating current can be
adjusted using the Source resistor ladders located along the bottom edge, by bonding a particular pad
to ground, in order to optimize noise or power performance.
Typical applications include low-noise front end amplifiers, and general gain block utilizations in X-
band. The amplifier is unconditionally stable over all load states (-45 to +85
C), and conditionally
stable if the input port is open-circuited.
ELECTRICAL SPECIFICATIONS AT 22C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Operating Frequency Bandwidth
BW
8.5
14
GHz
Small Signal Gain
S
21
V
DD
= +6 V I
DD
60% I
DSS
16.5
18 21 dB
Saturated Drain Current
(see Note)
I
DSS
V
DD
= +3V
210
230
270
mA
Operating Current
I
DQ
V
DD
= +6V
125
140
165
mA
Small Signal Gain Flatness
S
21
V
DD
= +6 V I
DD
60% I
DSS
0.8
1.2
dB
Noise Figure
NF
V
DD
= +6 V I
DD
60% I
DSS
2.6
3.5
dB
3
rd
-Order Intermodulation Distortion
IMD
V
DD
= +6 V I
DD
60% I
DSS
P
OUT
= +6 dBm SCL
-46
dBc
Power at 1dB Compression
P
1dB
V
DD
= +6 V I
DD
60% I
DSS
16
17.5 dBm
Input Return Loss
S
11
V
DD
= +6 V I
DD
60% I
DSS
-10 -6 dB
Output Return Loss
S
22
V
DD
= +6 V I
DD
60% I
DSS
-16
-10
dB
Reverse Isolation
S
12
V
DD
= +6 V I
DD
60% I
DSS
-40
-35
dB
NOTE:
Continuous operation at I
DSS
is not recommended
PRELIMINARY
FMA411
L
OW
-N
OISE
X-BAND
MMIC
Phone: +1 408 850-5790
www.filcs.com
Revised: 7/19/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Symbol
Test Conditions
Min
Max
Units
Supply Voltage
V
DD
For any operating current
8
V
Supply Current
I
DD
For V
DD
< 7V
75% I
DSS
mA
RF Input Power
P
IN
For standard bias conditions
0
dBm
Storage Temperature
T
STG
Non-Operating Storage
-40
150
C
Total Power Dissipation
P
TOT
See De-Rating Note below
980
mW
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
2
2 or more Max. Limits
80
%
1
T
Ambient
= 22
C unless otherwise noted
2
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22C:
P
TOT
= 0.6 - (0.004W/
C) x T
CARRIER
where T
CARRIER
= carrier or heatsink temperature above 22
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
C carrier temperature: P
TOT
= 0.6 - (0.004 x (55 22)) = 0.47W
For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
some degradation in thermal de-rating performance (P
TOT
= 550mW)
Note on Thermal Resistivity: The nominal value of 250C/W is stated for the input stage, which will reach
temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175
C/W.

HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
PRELIMINARY
FMA411
L
OW
-N
OISE
X-BAND
MMIC
Phone: +1 408 850-5790
www.filcs.com
Revised: 7/19/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
MECHANICAL OUTLINE:
Notes:
1) All units are in microns, unless otherwise specified.
2) All bond pads are 100x100 m
2
3) Bias pad (V
DD
) size is 100x100 m
2