Preliminary Data Sheet
2.2
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2007
DC-6GHz DPDT Diversity Switch
Features:
Low Insertion loss
Low
Harmonic
Distortion
High Transmit-Receive Isolation
Suitable for WLAN 802.11a and 802.11b/g
Applications
Filtronic Advanced GaAs pHEMT
Technology
Description and Applications:
The FMS2007 is a low loss linear Double-Pole Double-Throw dual band diversity switch designed for
use in WLAN applications. Typical applications are for UNII, Hiperlan, 802.11a and 802.11b/g
systems that employ two antennas for transmit and receive diversity.
Electrical Specifications:
(T
AMBIENT
= 25C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
2.4GHz
0.9
1.1
dB
Insertion Loss
6GHz
1.3
1.5
dB
Return
Loss
2.4GHz
16 dB
Return
Loss
6GHz
12 dB
Tx-Rx Isolation
2.4GHz
27
39
dB
Tx-Rx Isolation
6GHz
27
28
dB
2nd Harmonic Level
2.4, 6 GHz, Pin = 20dBm, Vctrl = 2.4V
-70
dBc
3rd Harmonic Level
2.4, 6 GHz, Pin = 20dBm, Vctrl =2.4V
-70
dBc
Switching speed
Vctrl=2.4V, Pin=20dBm
10% to 90% RF and 90% to 10% RF
30 ns
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).
All unused ports terminated in 50
.
Functional Schematic
V4
TX
V3
ANT1
ANT2
V1
RX V2
Preliminary Data Sheet
2.2
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2007
Absolute Maximum Ratings:
Parameter
Absolute Maximum
Max Input Power
+27dBm
Control Voltage
+5V
Operating Temperature
-40C to +100C
Storage Temperature
-55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
State
V1
V2
V3
V4
PATH(S)
1 HIGH
LOW
LOW
LOW
RX-ANT1
2 LOW
HIGH
LOW
LOW
RX-ANT2
3 LOW
LOW
HIGH
LOW
TX-ANT2
4 LOW
LOW
LOW
HIGH
TX-ANT1
5
LOW
HIGH
LOW
HIGH
TX-ANT1 & RX-ANT2
6
HIGH
LOW
HIGH
LOW
TX-ANT2 & RX-ANT1
Note:
`High' = +2.4V to +5V
`Low' = 0V to +0.2V
Preliminary Data Sheet
2.2
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2007
Pad and Die Layout:
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (
m)
Die Thickness (
m)
Min. Bond Pad
Pitch(
m)
Min. Bond pad
opening (
m)
897x929 150
127 80x80
Pad Number
Pad Name
Description
Pin Coordinates
(x
m, y m)
A GND Ground
(142.1
,
709.0)
B
ANT1
Antenna 1
(142.1 , 581.6)
C GND Ground
(142.1
,
448.5)
D
ANT2
Antenna 2
(142.1 ,327.9)
E GND Ground
(142.1
,
201.4)
F V1 RX-Ant1
(349.8
,
88.5)
G V3 TX-Ant2
(522.2
,
88.5)
H GND Ground
(769.2
,
201.4)
I RX Receive
(769.2
,
327.9)
J GND Ground
(769.2
,
448.5)
K TX Transmit
(769.2
,
581.6)
L GND Ground
(769.2
,
709.0)
M V2 RX-Ant2
(522.2
,
807.7)
N V4 Tx-Ant1
(349.8
,
807.7)
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Preliminary Data Sheet
2.2
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2007
Typical Performance Curves:
On Wafer Measurements:
Insertion
Loss A1-TX
Isolation
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-45
-40
-35
-30
-25
-20
Evaluation Board:
Insertion
Loss Return
Loss
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-3
-2.5
-2
-1.5
-1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-60
-50
-40
-30
-20
-10
0
Note: Evaluation Board Insertion Loss to be corrected
A1-TX,
A2-RX
Isolation
RX-TX
Isolation
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-60
-50
-40
-30
-20
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
-60
-50
-40
-30
-20
Preliminary Data Sheet
2.2
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2007
Evaluation Board Data:
BOM
Eva
luation Board Correction Data
Frequency
Insertion Loss
2.4GHz 0.25dB
6.0GHz 0.80dB
Label
Component
C1
Capacitor, 100pF, 0603
C2 Capacitor,
47pF,
0402
TX
RX
ANT1
ANT2
C2
C2
C2
C1
C1
C2
C2
C2
C1
C1
Preliminary Data Sheet
2.2
6
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2007
Ordering Information:
Part Number
Description
FMS2007-000-WP
FMS2007-000-GP
Die waffle pak
Die gel pak
FMS2007-000-EB
Die mounted on evaluation board
FMS2007-000-FF
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective
results for 25
m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
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