Preliminary Data Sheet
1.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2010
SP6T GaAs Multi-Band GSM Antenna Switch
Features:
Available in die form
Suitable for multi-band GSM/DCS/PCS/EDGE
applications
Excellent low control voltage performance
Excellent harmonic performance under GSM/
DCS/PCS power levels
Very high Tx-Rx isolation >45dB typ. at 1.8GHz
Very high Tx-Tx isolation >30dB typ. at 1.8GHz
Very low Tx Insertion loss
Very low control current
Description and Applications:
The FMS2010 is a low loss, high power and linear single pole six throw Gallium Arsenide antenna
switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05
0.5
m switch process technology that offers leading edge performance optimised for switch
applications. The FMS2010 is designed for use in dual, tri and quad band GSM handset antenna
switch modules and RF front-end modules.
Electrical Specifications:
(T
AMBIENT
= 25C,V
control
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
__
__
0.5
0.6
0.7
0.9
dB
dB
Rx Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
__
__
0.6
0.8
0.8
1.2
dB
dB
Return Loss
0.5 2.5 GHz
__
23
__
dB
Isolation
TX-TX
0.5 1.0 GHz
1.0 2.0 GHz
30
25
33
31
__
__
dB
dB
Isolation
TX-RX
0.5 1.0 GHz
1.0 2.0 GHz
45
40
50
45
__
__
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
(17:1 VSWR)
__
__
-75
-75
-70
-70
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
(17:1 VSWR)
__
__
-75
-75
-70
-70
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
__
__
< 0.3
< 1.0
__
__
s
s
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF).
All unused ports terminated in 50
.
ANT
VTX1
TX1
VTX2
TX2
VRX1
RX1
VRX2
RX2
VRX3
RX3
RX4
VRX4
VRXC
ANT
VTX1
TX1
VTX2
TX2
VRX1
RX1
VRX2
RX2
VRX3
RX3
RX4
VRX4
VRXC
Preliminary Data Sheet
1.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2010
Absolute Maximum Ratings:
Parameter
Absolute Maximum
Max Input Power
+38dBm
Control Voltage
+8.5V
Operating Temp
-40 C to 100C
Storage Temp
-55 C to 150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
VRXC
VRX4
VTX2
VRX3
VRX1
VRX2
VTX1
ON
PATH
Low
Low
Low
Low
Low
Low
High
ANT-TX1
Low
Low
High
Low
Low
Low
Low
ANT-TX2
High
Low
Low
Low
High
Low
Low
ANT-RX1
High
Low
Low
Low
Low
High
Low
ANT-RX2
High
Low
Low
High
Low
Low
Low
ANT-RX3
High
High
Low
Low
Low
Low
Low
ANT-RX4
Note:
`High' =
+2.5V to +5V
`Low' =
0V to +0.2V
Preliminary Data Sheet
1.1
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filcs.com
FMS2010
Pad and Die Layout:
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (
m)
Die Thickness (
m)
Min. Bond Pad
Pitch(
m)
Min. Bond pad
opening (
m)
1100 x 1000
150 m
113
70 x 70
Pad Number
Pad Name
Description
Pin Coordinates (m)
A
VRXC
Common Receive Switch
Control Voltage
195, 126
B
VRX4
RX4 Control Voltage
315, 126
C
VTX2
TX2 Control Voltage
440, 126
D
VRX3
RX3 Control Voltage
556, 126
E
VRX1
RX1 Control Voltage
675, 126
F
VRX2
RX2 Control Voltage
795, 126
G
VTX1
TX1 Control Voltage
919, 126
H
TX2
TX2 RF Output
108, 904
I
TX1
TX1 RF Output
108, 242
J
ANT
Antenna
474, 912
K
RX4
RX4 RF Output
988, 880
L
RX3
RX3 RF Output
988, 750
M
RX2
RX2 RF Output
988, 420
N
RX1
RX1 RF Output
988, 290
O
GND
Ground 1
108, 514
P
GND
Ground 2
108, 627
Q
GND
Ground 3
988, 525
J
K
L
M
N
A B
C
D
E F G
H
I
O
P
Q
Preliminary Data Sheet
1.1
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2010
Typical Measured Performance Curves:
TX Loss
RX Loss
TX-TX
Isolation
RX-RX
Isolation
TX-RX Isolation
TX Harmonic Level
0.5
1
1.5
2
2.5
Frequency (GHz)
-40
-30
-20
-10
I
s
o
l
at
i
o
n (
d
B
m
)
1.8 GHz
-23.3 dB
0.8 GHz
-28.5 dB
RX3 - RX1 Isolation
RX2 - RX1 Isolation
RX4 - RX2 Isolation
0.5
1
1.5
2
2.5
Frequency (GHz)
-60
-50
-40
-30
-20
-10
0
I
s
o
l
at
i
o
n (
d
B)
0.8 GHz
-33.9 dB
1.8 GHz
-31.4 dB
TX1 - TX2 Isolation
TX2 - TX1 Isolation
0.5
1
1.5
2
2.5
Frequency (GHz)
-80
-60
-40
-20
Is
o
l
a
t
i
o
n
(
d
B
m
)
1.8 GHz
-45.1 dB
1.8 GHz
-47.7 dB
0.8 GHz
-50.5 dB
RX3 - TX1 Isolation
RX4 - TX2 Isolation
RX2 - TX2 Isolation
Preliminary Data Sheet
1.1
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2010
Evaluation Board:
BOM
Label
Component
C1
Capacitor, 47pF, 0402
C2
Capacitor, 470pF, 0603
C3
Capacitor, 100pF, 0402
C1
C1
C1
C1
C1
C1
C1
C2
C2 C2 C2 C2 C2
C2
C3
C3
C3
C3
C3
C3
C3
Preliminary Data Sheet
1.1
6
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2010
Ordering Information:
Part Number
Description
FMS2010-000-WP
FMS2010-000-GP
Die waffle pak
Die gel-pak
FMS2010-000-EB
Die mounted on evaluation board
FMS2010-000-FF
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective
results for 25
m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
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