Preliminary Data Sheet
2.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Features:
Available as RF Known Good Die
Excellent low control voltage performance
Excellent harmonic performance
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5
m switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
(T
OP
= 25C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Tx Insertion Loss
4GHz
1.0
dB
Rx
Insertion
Loss
4GHz
1.0 dB
Return
Loss
4GHz
15 dB
VSWR On State
4GHz
1:1.3
VSWR Off State
4GHz
1:1.4
Isolation at 4 GHz
4GHz
49
dB
2nd Harmonic Level
3GHz, Pin = 21dBm, Vctrl = 3V
3GHz, Pin = 27dBm, Vctrl = 5V
-72
-68
dBc
dBc
Switching speed
Pin = 21dBm, 10% to 90% RF
30
ns
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF).
Functional Schematic
RFIN
V2
V1
RF02
RF01
RFIN
V2
V1
RF02
RF01
Preliminary Data Sheet
2.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
P
in +30dBm
Control Voltage
V
ctrl +5V
Operating Temperature
T
OP
-40C to +100C
Storage Temperature
T
OP
-55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Note:
`High' = >2.5V & <5V
`Low' = <0.2V
Pad and Die Layout:
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (
m)
Die Thickness
(
m)
Min. Bond Pad
Pitch (
m)
Min. Bond pad
Opening (
m)
870 x 970
150
141
94 x 94
V
ctrl1
V
ctrl2
RFIN-RF01
RFIN-RF02
High Low On Off
Low High Off On
Pad
Reference
Pad
Name
Description
Pin Coordinates
(
m)
A
G1
GND1
159 , 286
B
RFI
RFIN
159 , 446
C
C2
Vctrl1
159 , 606
D
C1
Vctrl2
159 , 766
E
RFO1
RFO1
757 , 857
F
G2
GND2
757 , 555
G
G3
GND3
757 , 414
H
RFO2
RFO2
757 , 112
A
B
C
D
E
F
G
H
Preliminary Data Sheet
2.1
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
Typical Measured Performance Curves Mounted on Evaluation Board:
0
2
4
6
Frequency (GHz)
1
1.2
1.4
1.6
1.8
2
VS
W
R
Off State
On State
0
2
4
6
Frequency (GHz)
-70
-60
-50
-40
-30
-20
Is
ol
at
i
o
n
(
d
B
)
Isolation (dB)
VSWR vs. Frequency Isolation vs. Frequency
3e-005
2
4
6
-2
-1.5
-1
-0.5
0
L
o
ss (d
B
)
dB(S21)
20
22
24
26
28
30
Input Power (dBm)
-1.8
-1.6
-1.4
-1.2
-1
-0.8
L
o
ss (
d
B)
3V
5V
Insertion Loss vs. Frequency Insertion Loss vs. Power
Preliminary Data Sheet
2.1
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
Evaluation Board:
Label
Component
C1, C2
Capacitor, 470pF, 0603
C3, C4, C5
Capacitor, 100pF, 0202
C6, C7
Capacitor, 47pF, 0402
Evaluation Board De-Embedding Data (Measured):
3e-005
2
4
6
Frequency (GHz)
-40
-30
-20
-10
0
S1
1
(
d
B
)
S11 (dB)
0
2
4
6
Frequency (GHz)
-1
-0.8
-0.6
-0.4
-0.2
0
Lo
ss (
d
B
)
Loss (dB)
Return Loss vs. Frequency Insertion Loss vs. Frequency
0
2
4
6
Frequency (GHz)
-70
-60
-50
-40
-30
-20
I
s
ol
at
i
o
n
(
d
B
)
Isolation (dB)
Isolation vs. Frequency
C1
C2
C3
C4
C5
C6
C7
RFIN
V1 GRD V2 RFO1
RFO2
Preliminary Data Sheet
2.1
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
Ordering Information:
Part Number
Description
FMS2013-000-WP
FMS2013-000-GP
Die waffle pak
Die gel pak
FMS2013-000-EB
Die mounted on evaluation board
FMS2013-000-FF
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150C and a bonding force of 40g has been shown to give effective
results for 25
m wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
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