Preliminary Data Sheet
2.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2014QFN
High Power GaAs SPDT Switch
Features:
3x3x0.9mm Packaged pHEMT Switch
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high Tx-Rx isolation: >28dB typ. at
1.8GHz
Very low Insertion loss: 0.5dB at 1.8GHz
Very low control current
Functional Schematic
Description and Applications:
The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5
m switch process technology, which offers excellent performance optimised for
switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
(T
AMBIENT
= 25C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 1.0 GHz
1.0 2.0 GHz
0.45
0.5
dB
dB
Return Loss
0.5 2.5 GHz
20
dB
Isolation
0.5 1.0 GHz
1.0 2.0 GHz
-32
-30
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
1.0
s
s
Control Current
+35dBm RF input @1GHz
<10
A
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
ANT
V1
RF1
V2
RF2
Preliminary Data Sheet
2.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2014QFN
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Pin
+38dBm
Control Voltage
V ctrl
+5V
Operating Temp
T oper
-40C to +100C
Storage Temp
T stor
-55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Switch
State
VC1
VC2
ANT RF1
ANT RF2
(A)
HIGH
LOW
Insertion Loss
Isolation
(B) LOW
HIGH
Isolation
Insertion Loss
General Test Conditions:
Bias Voltages
LOW = 0V to 0.2V
HIGH +2.5V to +5V
Port Impedances
50
Off arm termination
50
Preliminary Data Sheet
2.1
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2014QFN
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2014QFN INSERTION LOSS
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2014QFN RETURN LOSS
-40
-35
-30
-25
-20
-15
-10
-5
0
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS 2014QFN ISOLATION
-35
-32.5
-30
-27.5
-25
-22.5
-20
dB
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
= 2.5V (high) & 0V (low), T
AMBIENT
= 25C unless otherwise stated)
Preliminary Data Sheet
2.1
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2014QFN
Pad Layout:
*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
Pin Number
Description
1 N/C
2 N/C
3 RF1
4 N/C
5 N/C
6 N/C
7 RF2
8 N/C
9 N/C
10 V2
11 ANT
RF
12 V1
8
6
V1
3
4
5
12
Pin 1
RF1
V2
RF2
ANT
2
7
9
10
11
Preliminary Data Sheet
2.1
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2014QFN
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2014QFN CAL BOARD INSERTION LOSS
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
Evaluation Board:
Evaluation Board De-Embedding Data (Measured):
BOM
Label
Component
C3,C4
Capacitor, 470pF, 0603
C1,C2
Capacitor, 100pF, 0402
C5,C6 Capacitor,
47pF,
0402
BOARD
Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
C1
C2
C3
C4
C5
C6
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