Preliminary Data Sheet
2.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com
Website:
www.filtronic.co.uk/semis
FMS2017QFN
2.4GHz DPDT GaAs Single-Band WLAN Switch
Features:
3x3x0.9mm Packaged pHEMT Switch
Suitable for Single-band WLAN 802.11b/g
Applications
Excellent low control voltage performance
Very low Insertion loss typ. 0.6dB at 2.5GHz
High isolation typ. 23dB at 2.5GHz
Filtronic Advanced GaAs pHEMT Technology
Description and Applications:
The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for
use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5
m switch process
technology that offers leading edge performance, optimised for switch applications.
The FMS2017QFN is designed for use in 802.11b/g WLAN modules.
Electrical Specifications:
(T
AMBIENT
= 25C,V
ctrl
= 0V/(2.4V,+3.3V), Z
IN
= Z
OUT
= 50
)
Parameter
Conditions
Min
Typ
Max
Units
Insertion Loss (All Paths)
2.5GHz, Small Signal
0.6
dB
Isolation (All Paths)
2.5GHz, Small Signal
23
dB
Return Loss
2.5GHz, Small Signal
20
dB
P0.1dB
2.5GHz Control Voltage 3.0V
>33
dBm
2nd Harmonic Level
2.4GHz, Pin = 32dBm, Vctrl =2.4V
-65
dBc
3rd Harmonic Level
2.4GHz, Pin = 32dBm, Vctrl =2.4V
-65
dBc
Switching speed
Vctrl=2.4V, Pin=20dBm
20
nS
Note: External DC blocking capacitors are required on all RF ports (typ: 47pF)
All unused ports terminated in 50
.
Functional Schematic
V4
TX / RF1
V3
ANT1
RF3
ANT2
RF4
V1
RX / RF2
V2
Preliminary Data Sheet
2.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com
Website:
www.filtronic.co.uk/semis
FMS2017QFN
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+5V
Operating Temperature
Toper
-40C to +100C
Storage Temperature
Tstor
-55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Switch
State
V1
V2
V3
V4
RX
ANT1
RX
ANT2
TX
ANT2
TX
ANT1
1 High Low Low Low
Insertion Loss
Isolation Isolation Isolation
2 Low
High
Low
Low
Isolation
Insertion Loss
Isolation Isolation
3 Low Low High Low
Isolation
Isolation
Insertion Loss
Isolation
4
Low
Low
Low
High Isolation Isolation Isolation
Insertion Loss
5 Low High Low High
Isolation
Insertion Loss
Isolation
Insertion Loss
6 High Low High Low
Insertion Loss
Isolation
Insertion Loss
Isolation
General Test Conditions:
Bias Voltages
LOW = 0V to 0.2V
HIGH +2.4V to +3.3V
Port Impedances
50
Off arm termination
50
Preliminary Data Sheet
2.1
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2017QFN
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2017QFN DE EMBEDDED INSERTION LOSS
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2017QFN ISOLATION
-40
-37.5
-35
-32.5
-30
-27.5
-25
-22.5
-20
-17.5
-15
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2017QFN RETURN LOSS
-40
-37.5
-35
-32.5
-30
-27.5
-25
-22.5
-20
-17.5
-15
-12.5
-10
dB
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions V
CTRL
=3V, T
AMBIENT
= 25C unless otherwise stated)
Preliminary Data Sheet
2.1
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2017QFN
Pad Layout:
*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
Pin Number
Description
1 N/C
2
ANT1 / RF3
3 N/C
4 V1
5 RX
/
RF2
6 V2
7 N/C
8
ANT2 / RF4
9 N/C
10 V3
11
Tx / RF1
12 V4
PADDLE GND
6
3
4
5
12
Pin 1
V3
TX
RF1
2
7
9
10
11
V4
V2
V1
RX
RF2
ANT2
RF4
ANT1
RF3
PADDLE
Preliminary Data Sheet
2.1
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com
Website: www.filtronic.co.uk/semis
FMS2017QFN
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2017QFN CAL BOARDS INSERTION LOSS
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
dB
0.5
1
1.5
2
2.5
3
Frequency (GHz)
FMS2017QFN CAL BOARDS RETURN LOSS
-45
-42.5
-40
-37.5
-35
-32.5
-30
-27.5
-25
-22.5
-20
-17.5
-15
dB
Evaluation Board:
Evaluation Board De-Embedding Data (Measured):
BOM
Label
Component
C1
Capacitor, 100pF, 0603
C2 Capacitor,
47pF,
0402
BOARD
Preferred evaluation board material is 0.25
mm thick ROGERS RT4350. All RF tracks
should be 50 ohm characteristic
impedance. Absolute placement of
surface mount de-coupling capacitors is not
critical.
C2
C2
C2
C1
RF3/ANT1
RF4/ANT2
RF1/TX
RF2/RX
V4, GND, V3
V1, GND, V2
C1
C1
C1
C2
C2
C2
C2
C2
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