DC20 GH
Z
MMIC SPDT R
EFLECTIVE
S
WITCH
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
1
Preliminary Datasheet v2.2
FMS2024
F
EATURES
:
Available in die form
Low Insertion loss 1.6 dB at 20GHz typical
Very high isolation 37 dB at 20GHz typical
Excellent low control voltage performance
G
ENERAL
D
ESCRIPTION
:
The FMS2024 is a low loss high isolation
broadband single pole single throw Gallium
Arsenide switch designed for use in broadband
communications instrumentation and electronic
warfare applications. The die is fabricated
using the Filtronic FL05 0.5
m switch process
technology that offers leading edge
performance optimised for switch applications.
F
UNCTIONAL
S
CHEMATIC
:
V2 V1 RFO1
V3 V4 RFO2
RFIN
V11
V22
V33
V44
V2 V1 RFO1
V3 V4 RFO2
RFIN
V11
V22
V33
V44
T
YPICAL
A
PPLICATIONS
:
Broadband communications
Instrumentation
Electronic warfare (ECM, ESM)
E
LECTRICAL
S
PECIFICATIONS
(based on on-wafer measurements)
:
P
ARAMETER
C
ONDITIONS
M
IN
T
YP
M
AX
U
NITS
Insertion Loss
(DC-10) GHz, Small Signal
1.2
dB
Insertion Loss
(10-15) GHz, Small Signal
1.35
dB
Insertion Loss
(15-20) GHz, Small Signal
1.55
dB
Isolation
(DC-10) GHz, Small Signal
48
dB
Isolation
(10-15) GHz, Small Signal
42
dB
Isolation
(15-20) GHz, Small Signal
37
dB
Return Loss
(DC-20) GHz, Small Signal
15
dB
Switching speed
50% control to 10% / 90% RF
10
ns
P1dB
-5V control
26
dBm
Note: T
AMBIENT
= 25C, Vctrl = 0V/-5V, Z
IN
= Z
OUT
= 50
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
2
Preliminary Datasheet v2.2
FMS2024
A
BSOLUTE
M
AXIMUM
R
ATINGS
:
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
P
AD
L
AYOUT
:
P
ARAMETER
S
YMBOL
A
BSOLUTE
M
AXIMUM
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+XV
Operating Temp
Toper
-40C to +100C
Storage Temp
Tstor
-55C to +150C
P
AD
N
AME
D
ESCRIPTION
P
IN
C
OORDINATES
(m)
RFIN
RFIN
116,1055
RFO1
RFOUT1
1408,1929
RFO2
RFOUT2
1408,181
V1
V1
645, 1929
V2
V2
395, 1929
V3
V3
395, 181
V4
V4
645, 181
V11
V11
1753,1608
V22
V22
1753,1408
V33
V33
1753,702
V44
V44
1753,502
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
D
IE
S
IZE
(
m)
D
IE
T
HICKNESS
(
m)
M
IN
. B
OND
P
AD
P
ITCH
(
m)
M
IN
. B
OND PAD
O
PENING
(
m x
m )
1910 x 2110
100
150
116 x 116
T
RUTH
T
ABLE
:
C
ONTROL LINES
RF
PATH
V1
OR
V11
V2
OR
V22
V3
OR
V33
V4
OR
V44
RFIN-RFO1
RFIN-RFO2
-5V
0V
-5V
0V
On
Off
0V
-5V
0V
-5V
Off
On
0V
-5V
-5V
0V
Off
Off
Note: -5V
0.2V; 0V
0.2V
Note: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
3
Preliminary Datasheet v2.2
FMS2024
T
YPICAL
M
EASURED
P
ERFORMANCE
O
N
W
AFER
:
Note: Measurement Conditions V
CTRL
= -5V (low) & 0V (high), T
AMBIENT
= 25C unless otherwise stated
1
6
11
16
20
Frequency (GHz)
Insertion Loss (dB)
-2
-1.5
-1
-0.5
0
1
6
11
16
20
Frequency (GHz)
Isolation (dB)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
1
6
11
16
20
Frequency (GHz)
Input Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
1
6
11
16
20
Frequency (GHz)
Output Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
0
0.5
1
1.5
2
2.5
3
15 16 17 18 19 20 21 22 23 24 25 26
Input Pow er (dB m)
Loss(dB
)
10 GHz
20 GHz
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website:
www.filtronic.com
4
Preliminary Datasheet v2.2
FMS2024
P
REFERRED
A
SSEMBLY
I
NSTRUCTIONS
:
H
ANDLING
P
RECAUTIONS
:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
To avoid damage to the devices care should
be exercised during handling. Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing. These
devices should be treated as Class 1A (0-500
V) as defined in JEDEC Standard No. 22-
A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
The back of the die is metallised and the
recommended mounting method is by the use
of solder or conductive epoxy. If epoxy is
selected then it should be applied to the
attachment surface uniformly and sparingly to
avoid encroachment of epoxy on to the top
face of the die and ideally should not exceed
half the chip height. For automated dispense
Ablestick LMISR4 is recommended and for
manual dispense Ablestick 84-1 LMI or 84-1
LMIT are recommended. These should be
cured at a temperature of 150
C for 1 hour in
an oven especially set aside for epoxy curing
only. If possible the curing oven should be
flushed with dry nitrogen.
A
PPLICATION
N
OTES
& D
ESIGN
D
ATA
:
Application Notes and design data including S-
parameters are available; please contact
Filtronic Compound Semiconductors Ltd.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4
m diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150
C and a bonding force of 40g has been
shown to give effective results for 25
m wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200C and bond
force should not be raised above 60g.
Thermosonic wedge bonding and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
D
ISCLAIMERS
:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
O
RDERING
I
NFORMATION
:
P
ART
N
UMBER
D
ESCRIPTION
FMS2024-000
Die in Waffle-pack
(Gel-pak available on request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
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