Preliminary Data Sheet
FP1510SOT89
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 2/26/02
Fax: (408) 970-9950
Email: sales@filss.com
FEATURES
28 dBm Output Power at 1-dB Compression at 1.8 GHz
19 dB Power Gain at 1.8 GHz
1.0 dB Noise Figure
45 dBm Output IP3 at 1.8 GHz
50% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.10
m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed
"mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The FP1510 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
LP1510SOT89-1
I
DSS
V
DS
= 2 V; V
GS
= 0 V
375
420
450
mA
LP1510SOT89-2
451
490
526
mA
LP1510SOT89-3
527
560
600
mA
Power at 1-dB Compression
P-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
26.5
28
dBm
Power Gain at 1-dB Compression
G-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
17
19
dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
IN
= 15 dBm
50
%
Noise Figure
NF
V
DS
= 5 V; I
DS
= 50% I
DSS
1.0
dB
Output Third-Order Intercept Point
IP3
V
DS
= 5V; I
DS
= 50% I
DSS
;
P
IN
= -1 dBm
45
dBm
Maximum Drain-Source Current
I
MAX
V
DS
= 2 V; V
GS
= 1 V
925
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
300
400
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
10
100
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 8 mA
-0.25
-1.2
-2.0
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 8 mA
10
12
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GD
= 8 mA
10
13
V
frequency=1.8 GHz
Preliminary Data Sheet
FP1510SOT89
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 2/26/02
Fax: (408) 970-9950
Email: sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3 C
7
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3 C
-3
V
Drain-Source Current
I
DS
T
Ambient
= 22
3 C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3 C
7
mA
RF Input Power
P
IN
T
Ambient
= 22
3 C
220
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3 C
175
C
Storage Temperature
T
STG
--
-65
175
C
Total Power Dissipation
P
TOT
T
Ambient
= 22
3 C
2.3
W
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25C:
P
TOT
= 2.3W (0.015W/
C) x T
PACK
where T
PACK
= source tab lead temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
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