Preliminary Data Sheet
FP2250QFN
P
ACKAGED
L
OW
N
OISE
,
H
IGH
L
INEARITY
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 10/18/02
Fax: (408) 970-9950
Email: sales@filss.com
FEATURES
29 dBm Output Power at 1-dB Compression
17 dB Power Gain at 2 GHz
1.0 dB Noise Figure at 2 GHz
42 dBm Output IP3
50% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium
Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25
m x 2250 m Schottky barrier gate, defined by electron-
beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source
and gate resistance. The epitaxial structure and processing have been optimized for reliable high-
power applications. The FP2250's active areas are passivated with Si
3
N
4
, and the QFN package is
ideal for low-cost, high-performance applications that require a surface-mount package. Typical
applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,
and other types of wireless infrastructure systems up to 10 GHz.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
I
DSS
V
DS
= 2 V; V
GS
= 0 V
560
635
705
mA
Saturated Drain-Source Current
FP2250QFN-1
FP2250QFN-2
706
770
850
mA
Power at 1-dB Compression
P-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
27
29
dBm
Power Gain at 1-dB Compression
G-1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
16
17
dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
50
%
Noise Figure
NF
V
DS
= 5 V; I
DS
= 50% I
DSS
1.0
dB
Output Third-Order Intercept Point
IP3
V
DS
= 5V; I
DS
= 50% I
DSS
42
dBm
Maximum Drain-Source Current
I
MAX
V
DS
= 2 V; V
GS
= 1 V
840
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
550
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
115
A
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 11 mA
-2.0
-0.25
V
Gate-Source Breakdown
Voltage Magnitude
V
BDGS
I
GS
= 11 mA
-10
-12
V
Gate-Drain Breakdown
Voltage Magnitude
V
BDGD
I
GD
= 11 mA
-10
-12
V
All RF data tested at 2.0 GHz
Preliminary Data Sheet
FP2250QFN
P
ACKAGED
L
OW
N
OISE
,
H
IGH
L
INEARITY
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 10/18/02
Fax: (408) 970-9950
Email: sales@filss.com
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3 C
6
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3 C
-3
V
Drain-Source Current
I
DS
T
Ambient
= 22
3 C
I
DSS
mA
Gate Current
I
G
T
Ambient
= 22
3 C
15
mA
RF Input Power
P
IN
T
Ambient
= 22
3 C
500
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3 C
175
C
Storage Temperature
T
STG
--
-65
175
C
Total Power Dissipation
P
TOT
T
Ambient
= 22
3 C
3.75
W
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25C:
P
TOT
= 3.75W (0.025W/
C) x T
PACK
where T
PACK
= source tab lead temperature. (Bottom of the Package)
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
PCB PAD LAYOUT
Preliminary Data Sheet
FP2250QFN
P
ACKAGED
L
OW
N
OISE
,
H
IGH
L
INEARITY
PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 10/18/02
Fax: (408) 970-9950
Email: sales@filss.com
PACKAGE OUTLINE
MBC
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.
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