PRELIMINARY DATA SHEET
FP4050
2-W
ATT
P
OWER
PHEMT
Phone: (408) 988-1845
http:// www.filtronicsolidstate.com
Revised: 10/04/00
Fax: (408) 970-9950
FEATURES
48 dBm IP3 at 2 GHz
34 dBm P-1dB at 2 GHz
14 dB Power Gain at 2 GHz
DESCRIPTION AND APPLICATIONS
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed "mushroom" gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 22
3 C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Output Power @
1 dB Compression
P
1dB
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
34
dBm
Power Gain @
1 dB Compression
G
1dB
f = 2 GHz; V
DS
= 8V; I
DS
= 50% I
DSS
14
dB
Saturated Drain-Source Current
I
DSS
V
DS
= 2V; V
GS
= 0V
950
1100
1300
mA
Maximum Drain-Source Current
I
MAX
V
DS
= 2V; V
GS
= 1V
2200
mA
Transconductance
G
M
V
DS
= 2 V; V
GS
= 0 V
880
mS
Pinch-Off Voltage
V
P
V
DS
= 2 V; I
DS
= 10 mA
-1.2
V
Gate-Drain Breakdown
Voltage Magnitude
|V
BDGD
|
I
GS
= 20 mA
12
15
V
Gate-Source Breakdown
Voltage Magnitude
|V
BDGS
|
I
GS
= 20 mA
12
15
V
Gate-Source Leakage
Current Magnitude
|I
GSL
|
V
GS
= -5 V
0.2
mA
Thermal Resistivity
Q
JC
15
C/W
DRAIN
BOND PAD
SOURCE
BOND PAD
(2X)
GATE
BOND PAD
PRELIMINARY DATA SHEET
FP4050
2-W
ATT
P
OWER
PHEMT
Phone: (408) 988-1845
http:// www.filtronicsolidstate.com
Revised: 10/04/00
Fax: (408) 970-9950
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Symbol
Nominal
Units
Drain-Source Voltage
V
DS
8
V
Gate-Source Voltage
V
GS
-1.0
V
Drain-Source Current
I
DS
500
mA
RF Input Power
P
IN
800
mW
Channel Operating Temperature
T
CH
150
C
Ambient Temperature
T
STG
-20/50
C
Note:
Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
T
Ambient
= 22
3
C
10
V
Gate-Source Voltage
V
GS
T
Ambient
= 22
3
C
-5
V
Drain-Source Current
I
DS
T
Ambient
= 22
3
C
800
mA
Gate Current
I
G
T
Ambient
= 22
3
C
180
mA
RF Input Power
P
IN
T
Ambient
= 22
3
C
TBD
mW
Channel Operating Temperature
T
CH
T
Ambient
= 22
3
C
175
C
Storage Temperature
T
STG
--
-65
175
C
Note:
Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the
device.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
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