PRELIMINARY
FPD1000V
1W
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
FEATURES (1.8 GHz)
31 dBm Linear Output Power
16 dB Power Gain
Useable Gain to 10 GHz
41 dBm Output IP3
Maximum Stable Gain of 20 dB
50% Power-Added Efficiency
10V Operation / Plated Source Thru-Vias
DESCRIPTION AND APPLICATIONS
The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The
FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22C
Parameter
Symbol
Test Conditions
Min
Typ Max Units
RF SPECIFICATIONS MEASURED AT f = 1.85 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 10V; I
DS
= 200 mA
S
and
L
tuned for Optimum IP3
30 31 dBm
Power Gain at dB Gain Compression
G
1dB
V
DS
= 10V; I
DS
= 200 mA
S
and
L
tuned for Optimum IP3
14.5 16.0
Maximum Stable Gain
S
21
/S
12
MSG V
DS
= 10 V; I
DS
= 200mA
P
IN
= 0dBm, 50
system
20 dB
Power-Added Efficiency
at 1dB Gain Compression
PAE V
DS
= 10V; I
DS
= 200 mA
S
and
L
tuned for Optimum IP3
50 %
3
rd
-Order Intermodulation Distortion
S
and
L
tuned for Optimum IP3
IM3 V
DS
= 10V; I
DS
= 200 mA
P
OUT
= 19 dBm (single-tone level)
-46
-44
dBc
Saturated Drain-Source Current
I
DSS
V
DS
= 1.3 V; V
GS
= 0 V
480
650
720
mA
Maximum Drain-Source Current
I
MAX
V
DS
= 1.3 V; V
GS
+1 V
1100 mA
Transconductance G
M
V
DS
= 1.3 V; V
GS
= 0 V
720
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -3 V
20
50
A
Pinch-Off Voltage
|V
P
| V
DS
= 1.3 V; I
DS
= 2.4 mA
0.7
0.9
1.4
V
Gate-Source Breakdown Voltage
|V
BDGS
| I
GS
= 2.4 mA
6
8
V
Gate-Drain Breakdown Voltage
|V
BDGD
| I
GD
= 2.4 mA
20
22
V
Thermal Resistivity
CC
See Note on following page
22
C/W
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
DIE SIZE (
m): 650 x 800
DIE THICKNESS: 75
m
BONDING PADS (
m): >70 x 65
PRELIMINARY
FPD1000V
1W
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 5V to 10V
Quiescent Current:
From 25% I
DSS
to 55% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
-3V < V
GS
< +0V
12
V
Gate-Source Voltage
V
GS
0V < V
DS
< +8V
-3
V
Drain-Source Current
I
DS
For V
DS
> 2V
I
DSS
mA
Gate Current
I
G
Forward or reverse current
+20/-20
mA
RF Input Power
2
P
IN
Under any acceptable bias state
575
mW
Channel Operating Temperature
T
CH
Under any acceptable bias state
175
C
Storage Temperature
T
STG
Non-Operating Storage
-40
150
C
Total Power Dissipation
P
TOT
See De-Rating Note below
7.0
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
%
1
T
Ambient
= 22
C unless otherwise noted
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22C:
P
TOT
= 7.0W (0.046W/
C) x T
HS
where T
HS
= heatsink or ambient temperature above 22
C
Example: For a 85
C heatsink temperature: P
TOT
= 7.0W (0.046 x (85 22)) = 4.1W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290
C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage
temperature should be 250-260
C.
PRELIMINARY
FPD1000V
1W
P
OWER P
HEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
BONDING DIAGRAM
Note: 25
m (0.001 in.) gold wire is recommended. No Source wire bonds are needed, device
features Source thru-vias.
All information and specifications are subject to change without notice.
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