FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
PERFORMANCE (1850 MHz)
29 dBm Output Power (P
1dB
)
16.5 dB Small-Signal Gain (SSG)
1.0 dB Noise Figure
42 dBm Output IP3
50% Power-Added Efficiency
Evaluation Boards Available
Featuring Lead Free Finish Package
DESCRIPTION AND APPLICATIONS
The FPD2250DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25
m x 1500 m Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD2250DFN is available in die form and in
other packages.
Typical applications include drivers or output stages in PCS/Cellular base station high-intercept-
point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 5 V; I
DS
= 50% I
DSS
28 29 dBm
Small-Signal Gain
SSG
V
DS
= 5 V; I
DS
= 50% I
DSS
15 16.5 dB
Power-Added Efficiency
PAE
V
DS
= 5 V; I
DS
= 50% I
DSS
;
P
OUT
= P
1dB
50 %
Noise Figure
NF
V
DS
= 5 V; I
DS
= 50% I
DSS
V
DS
= 5 V; I
DS
= 25% I
DSS
1.0
0.8
1.75 dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P
1dB
)
IP3 V
DS
= 5V; I
DS
= 50% I
DSS
Matched for optimal power
Matched for best IP3
42
43
dBm
Saturated Drain-Source Current
I
DSS
V
DS
= 1.3 V; V
GS
= 0 V
560
700
825
mA
Maximum Drain-Source Current
I
MAX
V
DS
= 1.3 V; V
GS
+1 V
1.1 A
Transconductance G
M
V
DS
= 1.3 V; V
GS
= 0 V
600
mS
Gate-Source Leakage Current
I
GSO
V
GS
= -5 V
1
10
A
Pinch-Off Voltage
|V
P
| V
DS
= 1.3 V; I
DS
= 2.25 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|V
BDGS
| I
GS
= 2.25 mA
12
16
V
Gate-Drain Breakdown Voltage
|V
BDGD
| I
GD
= 2.25 mA
12
16
V
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
-3V < V
GS
< +0V
8
V
Gate-Source Voltage
V
GS
0V < V
DS
< +8V
-3
V
Drain-Source Current
I
DS
For V
DS
> 2V
I
DSS
mA
Gate Current
I
G
Forward or reverse current
22
mA
RF Input Power
2
P
IN
Under any acceptable bias state
525
mW
Channel Operating Temperature
T
CH
Under any acceptable bias state
175
C
Storage Temperature
T
STG
Non-Operating Storage
-40
150
C
Total Power Dissipation
P
TOT
See De-Rating Note below
3.0
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
%
1
T
Ambient
= 22
C unless otherwise noted
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22
C:
P
TOT
= 3.0W (0.025W/
C) x T
PACK
where T
PACK
= package lead temperature above 22
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65
C package lead temperature: P
TOT
= 3.0W (0.025 x (65 22)) = 1.93W
The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly
recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is
affixed to a heatsink or thermal radiator.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site. Evaluation Boards available upon request.
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD2250DFN.
For standard Class A operation, a 50% of I
DSS
bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Note that
pHEMTs, since they are "quasi- E/D mode" devices, exhibit Class AB traits when operated at
50% of I
DSS
. To achieve a larger separation between P
1dB
and IP3, an operating point in the 25%
to 33% of I
DSS
range is suggested. Such Class AB operation will not degrade the IP3
performance.
PACKAGE OUTLINE
(dimensions in mm)
All information and specifications subject to change without notice.
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
PCB FOOT PRINT
TYPICAL I-V CHARACTERISTICS
DC IV Curves FPD2250SOT89
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
Dra
in-Sou
rc
e
Curre
nt
(A)
VG=-1.50V
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
FPD2250DFN
L
OW
N
OISE
,
H
IGH
L
INEARITY
P
ACKAGED
PHEMTT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis.com
Revised: 11/14/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
Note: The recommended method for measuring I
DSS
, or any particular I
DS
, is to set the Drain-Source
voltage (V
DS
) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which
would normally distort the current measurement (this effect has been filtered from the I-V curves
presented above). Setting the V
DS
> 1.3V will generally cause errors in the current measurements,
even in stabilized circuits.
Recommendation: Traditionally a device's I
DSS
rating (I
DS
at V
GS
= 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation between I
DSS
and P
1dB
(power at 1dB gain
compression). For pHEMTs it can be shown that there is no meaningful statistical correlation
between I
DSS
and P
1dB
; specifically a linear regression analysis shows r
2
< 0.7, and the regression
fails the F-statistic test. I
DSS
is sometimes useful as a guide to circuit tuning, since the S
22
does vary
with the quiescent operating point I
DS
.
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