PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 08/09/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
PERFORMANCE (1.8 GHz)
36.5 dBm Output Power (P
1dB
)
10.5 dB Power Gain (G
1dB
)
49 dBm Output IP3
10V Operation
45% Power-Added Efficiency
Evaluation Boards Available
Additional Design Data Available on Website
Usable Gain to 4GHz
DESCRIPTION AND APPLICATIONS
The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-
mount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
ELECTRICAL SPECIFICATIONS AT 22C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P
1dB
V
DS
= 10V; I
DQ
= 720 mA
S
and
L
tuned for Optimum IP3
35.5 36.5
dBm
Power Gain at dB Gain Compression
G
1dB
V
DS
= 10V; I
DQ
= 720 mA
S
and
L
tuned for Optimum IP3
9.5 10.5
Maximum Stable Gain
S
21
/S
12
MSG V
DS
= 10 V; I
DQ
= 720 mA
P
IN
= 0dBm, 50
system
19 dB
Power-Added Efficiency
at 1dB Gain Compression
PAE V
DS
= 10V; I
DQ
= 720 mA
S
and
L
tuned for Optimum IP3
45 %
3
rd
-Order Intermodulation Distortion
IP3
V
DS
= 10V; I
DQ
= 720 mA
S
and
L
tuned for Optimum IP3
P
OUT
= 25.5 dBm (single-tone level)
-47
-44
dBc
Saturated Drain-Source Current
I
DSS
V
DS
= 1.3 V; V
GS
= 0 V
1.9
2.3
2.65
A
Maximum Drain-Source Current
I
MAX
V
DS
= 1.3 V; V
GS
+1 V
3.6 A
Transconductance G
M
V
DS
= 1.3 V; V
GS
= 0 V
2.4
S
Gate-Source Leakage Current
I
GSO
V
GS
= -3 V
70
170
A
Pinch-Off Voltage
|V
P
| V
DS
= 1.3 V; I
DS
= 8 mA
0.7
0.9
1.4
V
Gate-Source Breakdown Voltage
|V
BDGS
| I
GS
= 8 mA
6
8
V
Gate-Drain Breakdown Voltage
|V
BDGD
| I
GD
= 8 mA
20
22
V
Thermal Resistivity (channel-to-case)
CC
See Note on following page
12
C/W
SEE PACKAGE
OUTLINE FOR
MARKING CODE
PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 08/09/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 5V to 10V
Quiescent Current:
From 25% I
DSS
to 55% I
DSS
ABSOLUTE MAXIMUM RATINGS
1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
-3V < V
GS
< +0V
12
V
Gate-Source Voltage
V
GS
0V < V
DS
< +8V
-3
V
Drain-Source Current
I
DS
For V
DS
> 2V
I
DSS
mA
Gate Current
I
G
Forward / Reverse current
+25/-4
mA
RF Input Power
2
P
IN
Under any acceptable bias state
1.5
W
Channel Operating Temperature
T
CH
Under any acceptable bias state
175
C
Storage Temperature
T
STG
Non-Operating Storage
-40
150
C
Total Power Dissipation
P
TOT
See De-Rating Note below
12
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits
3
2 or more Max. Limits
80
%
1
T
Ambient
= 22
C unless otherwise noted
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
Total Power Dissipation defined as: P
TOT
(P
DC
+ P
IN
) P
OUT
, where:
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
Total Power Dissipation to be de-rated as follows above 22C:
P
TOT
= 12 - (0.083W/
C) x T
PACK
where T
PACK
= source tab lead temperature above 22
C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55
C source lead temperature: P
TOT
= 12 - (0.083 x (55 22)) = 9.3W
Note on Thermal Resistivity: The nominal value of 12C/W is measured with the package mounted on a large
heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source
flange.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 08/09/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
BIASING GUIDELINES
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative
voltage supply for depletion-mode devices such as the FPD4000AF.
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 0.7
for the recommended 720mA operating point. This
approach will require a DC Source resistor capable of at least 365mW dissipation.
The recommended 720mA bias point is nominally a Class AB mode. A small amount of RF gain
expansion prior to the onset of compression is normal for this operating point.
PACKAGE OUTLINE
(dimensions in millimeters mm)
All information and specifications subject to change without notice.
PACKAGE MARKING CODE
Example:
f1ZD
P2F
f = Filtronic
1ZD = Lot and Date Code
P2F = Status, Part Code, Part Type
Status: D=Development P = Production
Part Code denotes model (e.g. FPD4000AF)
Part Type: F = FET (pHEMT)
PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 08/09/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
TYPICAL RF PERFORMANCE (V
DS
= 10V I
DQ
= 720 mA
f
= 2000 MHz):
Power Transfer Characteristic
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
Input Power (dBm)
Outp
ut
P
o
we
r
(dBm
)
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
G
a
in C
o
mpressi
on (dB
)
Pout
Comp Point
Drain Efficiency and PAE
.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
Input Power (dBm)
PA
E (%)
.0%
10.0%
20.0%
30.0%
40.0%
50.0%
60.0%
70.0%
Drain Efficiency
(5
)
PAE
Eff.
PRELIMINARY
FPD4000AF
4W
P
ACKAGED
P
OWER P
HEMT
Phone: +1 408 850-5790
http:// www.filcs.com
Revised: 08/09/04
Fax: +1 408 850-5766
Email: sales@filcsi.com
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
IM Products vs. Input Power
22.0
24.0
26.0
28.0
30.0
32.0
11.0
13.0
15.0
17.0
19.0
21.0
Input Power (dBm)
Outp
ut Po
wer
(d
Bm)
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
IM Pro
ducts (dBc)
Pout
Im3, dBc
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
FPD4000AF IP3 CONTOURS 2 GHz
Swp Max
189
Swp Min
1
IP3_dBm = 58 dBm
IP3_dBm = 56 dBm
IP3_dBm = 54 dBm
IP3_dBm = 52 dBm
IP3_dBm = 50 dBm
IP3_dBm = 48 dBm
IP3_dBm = 46 dBm
IP3_dBm = 44 dBm
IP3_dBm = 42 dBm
NOTE:
IP3 contours generated with P
IN
= 11dB
back-off from P
1dB
. Local maximum for
best linearity located at:
S
= 15 j12
and
L
15 j15
(IP3 value labels on contours are fitted
values, and do not represent actual device
performance.)
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