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Электронный компонент: LMA110A

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Filtronic
.5-6 GHz MESFET Amplifier
Solid State
LMA110A
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Features
2.7dB Typical Noise Figure
23dB Typical Gain
12dBm Saturated Output Power
12dB
Input/Output Return Loss Typical
0.5-6GHz Frequency Bandwidth
+8.5 Volts Dual Bias Supply
DC Decoupled RF Input and Output
Chip Size : 1.62
mm
X1.62
mm
(.064"X.064")
Chip Thickness : 100
m
Pad Dimension : 100
m
2
Description
The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of
23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC
decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications at T
a
=25
C
(V
DD
=+8.0V, Zin=Zout=50
)
Absolute Maximum Ratings
Note
s:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
DSS 004 WD
Limit
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BW
Operating Bandwidth
0.5
6
GHz
S21
Small Signal Gain
V
D
=8V, Vg=-.85V
20
23
dB
Ids
Drain Operating Current
60
100
150
mA
S21
Small Signal Gain Flatness
0.4
1
dB
NF
Noise Figure
@ 50% Idss
2.7
3.5
dB
RLin
Input Return Loss
-10
dB
RLout
Output Return Loss
-10
dB
S12
Reverse Isolation
-35
-45
dB
P-1dB
1-dB Gain Compression Power
7
10
dBm
Symbol
Parameter/Conditions
Min.
Max.
Units
Vdd
Drain Supply Voltage
12
Volts
Idd
Total Drain Current
150
mA
Pin
RF Input Power
24
dBm
Pt
Power Dissipation
1.8
W
Tch
Operating Channel Temperature
150
C
Tstg
Storage Temperature
-65
165
C
Tmax.
Max. Assembly Temp.
(1 min. max.)
300
C
Filtronic
.5-6 GHz MESFET Amplifier
Solid State
LMA110A
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Assembly Diagram
Notes:
1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond
tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended.
Ultrasonic bonding is not recommended.
2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
3.) Bond on bond or stitch bond acceptable.
4.) Conductor over conductor acceptable. Conductors must not short.
DSS 004 WD
Filtronic
.5-6 GHz MESFET Amplifier
Solid State
LMA110A
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Mechanical Outline
Notes:
1.) Unless Otherwise specified.
2.) All units are in micron (m).
3.) All bond pads are 100 X 100 m
2
.
4.) Bias pad (V
DD
) size is 100 X 121.5 m
2
.
DSS 004 WD