Filtronic
2-10GHz MESFET Amplifier
Solid State
LMA116
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Features
4.5dB Typical Noise Figure
15dB Typical Gain
18dBm Saturated Output Power
12dB
Input/Output Return Loss Typical
2-10GHz Frequency Bandwidth
+8 Volts Single Bias Supply
DC Decoupled RF Output
Chip Size : 1.62
mm
X1.62
mm
(.064"X.064")
Chip Thickness : 100
m
Pad Dimension : 100
m
2
Description
The Filtronic LMA116 is a GaAs monolithic distributive amplifier which operates from 2 to 10GHz. This amplifier is self biased and four
450
m FETs are used to produce a typical gain of 15dB and a noise figure of 4.5dB. The LMA116 is suitable for gain block, low noise and
driver amplifier applications. DC decoupled output RF port. Ground is provided to the circuitry through vias to the backside metallization.
Electrical Specifications at T
a
=25
C
(V
DD
=+8.0V, Zin=Zout=50
)
Absolute Maximum Ratings
Notes
:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
3. On-chip 5
resistor set Ids of 80mA typical.
DSS 006 WC
Limit
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BW
Operating Bandwidth
2
10
GHz
S21
Small Signal Gain
V
D
=8V, V
G
=3.5V
,
Rs
1
=5
13
15
dB
Ids
Drain Operating Current
55
80
125
mA
S21
Small Signal Gain Flatness
1
1.5
dB
NF
Noise Figure
@ .5Idss
4.5
5.5
dB
RLin
Input Return Loss
-10
dB
RLout
Output Return Loss
-14
dB
S12
Reverse Isolation
-35
-40
dB
P-1dB
1-dB Gain Compression Power
12.5
15
dBm
Symbol
Parameter/Conditions
Min.
Max.
Units
Vdd
Drain Supply Voltage
12
Volts
Idd
Total Drain Current
125
mA
Pin
RF Input Power
24
dBm
Pt
Power Dissipation
1.5
W
Tch
Operating Channel Temperature
150
C
Tstg
Storage Temperature
-65
165
C
Tmax.
Max. Assembly Temp.
(1 min. max.)
300
C
Filtronic
2-10GHz MESFET Amplifier
Solid State
LMA116
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Assembly Diagram
SINGLE VOLTAGE SUPPLY SCHEME
Notes:
1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond
tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended.
Ultrasonic bonding is not recommended.
2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
3.) Bond on bond or stitch bond acceptable.
4.) Conductor over conductor acceptable. Conductors must not short.
DSS 006 WC
Filtronic
2-10GHz MESFET Amplifier
Solid State
LMA116
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Assembly Diagram
Notes:
1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond
tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended.
Ultrasonic bonding is not recommended.
2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes.
3.) Bond on bond or stitch bond acceptable.
4.) Conductor over conductor acceptable. Conductors must not short.
DSS 006 WC
TWO VOLTAGE SUPPLY SCHEME
Filtronic
2-10GHz MESFET Amplifier
Solid State
LMA116
Phone:
(408) 988-1845
Internet:
http://www.FiltronicSolidState.com
Fax:
(408) 970-9950
Mechanical Outline
Notes:
1.) Unless Otherwise specified.
2.) All units are in micron (m).
3.) All bond pads are 100 X 100 m
2
.
4.) Bias pad (V
DD
) size is 100 X 121.5 m
2
.
DSS 006 WC